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Иш: Effect of Deposition of Submonolayer Cs Coatings on the Density of Electronic States and Energy Band Parameters of CoSi2/Si(111)

  1. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    МақолаSemiconductor materials and interfacesApplied Solar Energy201921 иқтибос
    ABI

  2. Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy

    Б. Е. Умирзаков, Д. А. Ташмухамедова, E.U. Boltaev +1

    МақолаSemiconductor materials and interfacesMaterials Science and Engineering B200314 иқтибос
    ABI

  3. Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions

    А.С. Рысбаев, J. B. Khujaniyozov, I. R. Bekpulatov +2

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 иқтибос
    ABI

  4. Method for additional purification of the surface of Si(111) single crystal

    A. S. Risbaev, J. B. Khujaniyazov, I. R. Bekpulatov +1

    МақолаMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 иқтибос
    ABI

  5. Features of CoSi2 phase formation by two-stage rapid thermal annealing of Ti/Co/Ti/Si(100) structures

    V. I. Rudakov, Yu. I. Denisenko, В. В. Наумов +1

    Мақола20119 иқтибос
    ABI

  6. Photoelectron Si 2p spectra of ultrathin CoSi2 layers formed on Si(100)2×1

    M. V. Gomoyunova, I. I. Pronin, N. R. Gall +2

    Мақола20039 иқтибос
    ABI

  7. Laser Recrystallization and 3D Integration

    J.-P. Colinge

    Мақола19846 иқтибос
    ABI

  8. Photoemission spectroscopy of the evolution of ultra-thin Co films on Si(111) substrates upon annealing temperature

    Ki-jeong Kim, Tai‐Hee Kang, Kwang-woo Kim +2

    Мақола20005 иқтибос
    ABI

  9. Structure of Epitaxial CoSi<sub>2</sub> Films on Si(111) Studied with Low-Energy Electron Diffraction (LEED)

    Ulrich Starke, J. Schardt, W. Weiß +3

    Мақола19984 иқтибос
    ABI

  10. Si based optoelectronics for communications

    G. Masini, Lorenzo Colace, Gaetano Assanto

    Мақола20023 иқтибос
    ABI

  11. Will silicon be the photonic material of the third millenium? *

    Lorenzo Pavesi

    Мақола20033 иқтибос
    ABI

  12. Interface structure of ultrathin CoSi2 films epitaxially grown on Si(111)

    A. Seubert, J. Schardt, W. Weiß +3

    Мақола20002 иқтибос
    ABI

  13. Unzipping and movement of Lomer-type edge dislocations in Ge/GeSi/Si(0 0 1) heterostructures

    Yu. B. Bolkhovityanov, A. S. Deryabin, А. К. Гутаковский +1

    Мақола20172 иқтибос
    ABI

  14. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  15. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI