Ушбу ишга иқтибос қилган ишлар

5 та иш

Иш: Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

1. Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam

   A. А. Lebedev, A. I. Veı̆nger, D. V. Davydov +3

   МақолаSilicon Carbide Semiconductor TechnologiesJournal of Applied Physics20001 иқтибос

   ABIABI:AkademIndex/openalex/2000.article.000005

2. Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers

   Evgenia V. Kalinina, G. Kholuyanov, Anatoly M. Strel’chuk +4

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20040 иқтибос

   ABIABI:AkademIndex/openalex/2004.article.000109

3. Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions

   Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +6

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20050 иқтибос

   ABIABI:AkademIndex/openalex/2005.article.000233

4. Radiation Hard Devices Based on SiC

   Evgenia V. Kalinina, Anatoly M. Strel’chuk, A. А. Lebedev +3

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20060 иқтибос

   ABIABI:AkademIndex/openalex/2006.article.000250

5. Far-Action Defects Formation and Gettering in 6H-SiC Lely Crystals Irradiated by Bi

   D.B. Shustov, E. Kolesnikova, Evgenia V. Kalinina +2

   МақолаSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20090 иқтибос

   ABIABI:AkademIndex/openalex/2009.article.000273