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20 та иш

Иш: Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics

  1. Nickel: A very fast diffuser in silicon

    Jeanette Lindroos, David P. Fenning, D. J. Backlund +5

    Мақола201317 иқтибос
    ABI

  2. Method for additional purification of the surface of Si(111) single crystal

    A. S. Risbaev, J. B. Khujaniyazov, I. R. Bekpulatov +1

    МақолаMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 иқтибос
    ABI

  3. SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY

    Н. Ф. Зикриллаев, S. Koveshnikov, С. Б. Исамов +2

    МақолаSemiconductor materials and interfacesSemiconductors20228 иқтибос
    ABI

  4. The effect of silicon-germanium microheterojunctions on the parameters of silicon solar cells

    Б. А. Абдурахманов, Х. М. Илиев, С. А. Тачилин +2

    МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20107 иқтибос
    ABI

  5. Photovoltaic Properties of Silicon Doped with Manganese and Germanium

    Н. Ф. Зикриллаев, Habibjon Kushiev, С. Б. Исамов +2

    Мақола20237 иқтибос
    ABI

  6. Solid Solubilities of Impurity Elements in Germanium and Silicon*

    F. A. Trumbore

    Мақола19604 иқтибос
    ABI

  7. Direct formation of large-scale multi-layered germanene on Si substrate

    Hsu‐Sheng Tsai, Yuze Chen, Henry Medina +5

    Мақола20153 иқтибос
    ABI

  8. The Diffusion Coefficient of Germanium in Silicon

    M. Ogino, Yasuhisa Oana, M. Watanabe

    Мақола19823 иқтибос
    ABI

  9. Microstructural studies on variation of defect parameters in Zr-Sn alloys and their transition with interchange of solvent and solute in Zr-Ti and Ti-Zr alloy systems by modified Rietveld method and Warren-Averbach method

    Jiten Ghosh, S. K. Chattopadhyay, Ajit Kumar Meikap +1

    Мақола20062 иқтибос
    ABI

  10. Liquid phase epitaxy of (Sn2)1−x(InSb)x solid solution layers

    А. С. Саидов, A. Sh. Razzakov, D. V. Saparov

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20022 иқтибос
    ABI

  11. Recombination activity associated with thermal donor generation in monocrystalline silicon and effect on the conversion efficiency of heterojunction solar cells

    M. Tomassini, Jordi Veirman, Renaud Varache +4

    Мақола20162 иқтибос
    ABI

  12. Synergistic Effects of Ge and Si on the Performances and Mechanism of the Ge<sub><i>x</i></sub>Si<sub>1–<i>x</i></sub> Electrodes for Li Ion Batteries

    D. Duveau, Bernard Fraisse, Frédérique Cunin +1

    Мақола20152 иқтибос
    ABI

  13. Silicon–Germanium: The Legacy Lives On

    B. A. Cook

    Мақола20222 иқтибос
    ABI

  14. Сарлавҳасиз

    Бошқа1 иқтибос
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    Бошқа1 иқтибос
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    Бошқа1 иқтибос
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  20. Сарлавҳасиз

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