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7 та иш

Иш: Photovoltaic Properties of Silicon Doped with Manganese and Germanium

  1. Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics

    Н. Ф. Зикриллаев, G. A. Kushiev, Sergey V. Koveshnikov +3

    МақолаSemiconductor materials and interfacesEast European Journal of Physics20238 иқтибос
    ABI

  2. Magnetic Properties of Silicon Doped with Impurity Atoms of Europium

    Н. Ф. Зикриллаев, G. H. Mavlonov, Levent Trabzon +4

    МақолаMagnetic properties of thin filmsJournal of Nano- and Electronic Physics20235 иқтибос
    ABI

  3. Magnetic Properties of Silicon with Paramagnetic Impurity Atoms

    N. F. Zikrillayev, Г. Х. Мавлонов, Levent Trabzon +4

    МақолаSemiconductor materials and interfacesEast European Journal of Physics20231 иқтибос
    ABI

  4. The Prospects of Obtaining a New Material with a Hetero-Baric Structure Gexsi1 – x-Si Based on Silicon for Photo Energy Applications

    Habibjon Kushiev, B. O. Isakov, U. X. Mukhammadjonov

    МақолаMaterial Properties and ApplicationsJournal of Nano- and Electronic Physics20241 иқтибос
    ABI

  5. Study of infrared quenching in silicide-silicon-silicide structures

    A. T. Mamadalimov, Makhmudhodzha Isaev

    МақолаSemiconductor materials and interfacesAdvanced Physical Research20240 иқтибос
    ABI

  6. Effective Charge of Mn and Ni Impurity Atoms in Silicon Under the Influence of An External Electric Field

    B. O. Isakov, Xalmurat M. Iliyev, Zafar B. Khudoynazarov +1

    МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 иқтибос
    ABI

  7. Study of the temperature dependence of the electrophysical and crystal structure of a thin coating of manganese silicide

    B.D. Igamov, A.I. Kamardin, I.R. Bekpulatov +1

    МақолаSemiconductor materials and interfacesMaterials Today Communications20260 иқтибос
    ABI