Ушбу ишга иқтибос қилган ишлар

6 та иш

Иш: Direct-bandgap emission from hexagonal Ge and SiGe alloys

1. Growth and Morphological Study of Graded-Gap Si–Si1 – xGex–GaAs Structures

   А. С. Саидов, A. Sh. Razzokov

   МақолаSemiconductor materials and interfacesCrystallography Reports20225 иқтибос

   ABIABI:AkademIndex/openalex/2022.article.000489

2. Features of growing Si- and Si_1-<i>x</i>Ge_<i>x</i>-single-crystal films from solution-melt based on tin

   A. Sh. Razzokov, А. С. Саидов, V. V. Gіrzhon +1

   МақолаSilicon Nanostructures and PhotoluminescenceJournal of Physical Studies20222 иқтибос

   ABIABI:AkademIndex/openalex/2022.article.000838

3. Preparation and Morphological Studies of Epitaxial Layers of a Solid Solution Si1–xGex

   А. С. Саидов, Alozhon Sh. Razzokov

   МақолаSilicon Nanostructures and PhotoluminescenceSiberian Journal of Physics20202 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.458750

4. Physico-Chemical Bases Cultivation Variable-gap Semiconductor Solid Solution Si1−xGex from the Liquid Phase

   A. Sh. Razzakov, A. Matnazarov, Mutabar Latipova +1

   МақолаSilicon Nanostructures and PhotoluminescenceBulletin of Science and Practice20200 иқтибос

   ABIABI:AkademIndex/openalex/2020.article.003160

5. Getting Variable-gap Solid Solution Si1−xGex From a Liquid Phase

   A. Sh. Razzakov, A. Latipova, Alibek Qodirov

   МақолаSemiconductor Quantum Structures and DevicesBulletin of Science and Practice20210 иқтибос

   ABIABI:AkademIndex/openalex/2021.article.004376

6. Features of Growing a Solid Solution Si1−xGex (0 &lt; x &lt; 1) from a Liquid Phase

   Jamoliddin Razzokov

   БобSilicon and Solar Cell TechnologiesAdvances in Science, Technology & Innovation/Advances in science, technology & innovation20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.chapter.000710