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8 та иш

Иш: Photothermovoltaic Effect in p-Si−n-(Si2)1 –x–y(Ge2)x(ZnSe)y Structure

  1. Growth and Morphological Study of Graded-Gap Si–Si1 – xGex–GaAs Structures

    А. С. Саидов, A. Sh. Razzokov

    МақолаSemiconductor materials and interfacesCrystallography Reports20225 иқтибос
    ABI

  2. Features of growing Si- and Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>-single-crystal films from solution-melt based on tin

    A. Sh. Razzokov, А. С. Саидов, V. V. Gіrzhon +1

    МақолаSilicon Nanostructures and PhotoluminescenceJournal of Physical Studies20222 иқтибос
    ABI

  3. Technology of fabrication of CdS<sub>x</sub>Te<sub>1-x</sub> solid solution on silicon substrate

    I.B. Sapaev, S. Sadullaev, D. Babajanov +5

    МақолаAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences20231 иқтибос
    ABI

  4. Physico-Chemical Bases Cultivation Variable-gap Semiconductor Solid Solution Si1−xGex from the Liquid Phase

    A. Sh. Razzakov, A. Matnazarov, Mutabar Latipova +1

    МақолаSilicon Nanostructures and PhotoluminescenceBulletin of Science and Practice20200 иқтибос
    ABI

  5. Getting Variable-gap Solid Solution Si1−xGex From a Liquid Phase

    A. Sh. Razzakov, A. Latipova, Alibek Qodirov

    МақолаSemiconductor Quantum Structures and DevicesBulletin of Science and Practice20210 иқтибос
    ABI

  6. Obtaining new types of compounds between silicon and cadmium sulfide

    I.B. Sapaev

    МақолаChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20230 иқтибос
    ABI

  7. Technology of fabrication of CDS<sub>X</sub>Te<sub>1-X</sub> solid solution on silicon substrate

    I.B. Sapaev, Б. Сапаев, D. Babajanov

    МақолаChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20230 иқтибос
    ABI

  8. Obtaining new types of compounds between silicon and cadmium sulfide

    I.B. Sapaev

    МақолаChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20230 иқтибос
    ABI