Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Influence of proton irradiation on recombination current in 6H–SiC pn structures

1. Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures

   Anatoly M. Strel’chuk, Evgenia V. Kalinina, Andrey O. Konstantinov +1

   МақолаSilicon and Solar Cell TechnologiesMaterials science forum20052 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.381994

2. Influence of Irradiation on Excess Currents in SiC pn Structures

   Anatoly M. Strel’chuk, Vitalii V. Kozlovski, A. А. Lebedev +1

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20050 иқтибос

   ABIABI:AkademIndex/openalex/2005.article.000166

3. Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions

   Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +6

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20050 иқтибос

   ABIABI:AkademIndex/openalex/2005.article.000233