Ушбу ишга иқтибос қилган ишлар

4 та иш

Иш: Negative secondary ion mass spectra under Cs+ ion bombardment of the p-SiC-〈B〉-surface

1. Formation of defects on the surface of LiF crystals under irradiation with different ions mass

   Utkirjon Sharopov, Umid Gopparov, K. Yu. Rashidov +8

   МақолаIon-surface interactions and analysisRadiation effects and defects in solids20229 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.144479

2. Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al

   I. G. Atabaev, Kh. N. Juraev, V. A. Pak

   МақолаSilicon Carbide Semiconductor TechnologiesAdvances in Condensed Matter Physics20174 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.390748

3. Spectral Dependence of Optical Absorption of 4<i>H</i>-SiC Doped with Boron and Aluminum

   I. G. Atabaev, Kh. N. Juraev, M. U. Hajiev

   МақолаSilicon Carbide Semiconductor TechnologiesJournal of Spectroscopy20181 иқтибос

   ABIABI:AkademIndex/openalex/2018.article.000197

4. Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion

   Kh. N. Zhuraev, А. Yusupov, A. G. Gulyamov +3

   МақолаSilicon Carbide Semiconductor TechnologiesJournal of Engineering Physics and Thermophysics20201 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.470164