Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Large random telegraph noise in sub-threshold operation of nano-scale nMOSFETs

1. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

   A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1

   МақолаAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20215 иқтибос

   ABIABI:AkademIndex/openalex/2021.article.000827

2. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

   A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +3

   МақолаSemiconductor materials and devicesApplied Sciences20202 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.541488

3. Simulation of Random Telegraph Noise in Nanometer nMOSFET Induced by Interface and Oxide Trapped Charge

   A. É. Atamuratov, R. Granzner, M. Kittler +3

   БобSemiconductor materials and devicesNATO science for peace and security series. B, Physics and biophysics20130 иқтибос

   ABIABI:AkademIndex/openalex/2013.chapter.000013