Ушбу иш иқтибос қилган ишлар

6 та иш

Иш: Investigation of current instabilities in Mn4Si7–Si:Mn–Mn4Si7 and Mn4Si7–Si:Mn–M heterojunctions

1. Photoelectric properties of higher manganese silicide (HMS)-SilangleMnrangle-M structures

   T. S. Kamilov, V. P. Chirva, D.K. Kabilov

   МақолаSemiconductor materials and interfacesSemiconductor Science and Technology199911 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.199244

2. On the mechanism of appearance of space-charge-limited current in higher manganese silicide (HMS)--HMS and HMS--M structures

   T. S. Kamilov, B L Sadullaev, U Sh Ganiev +1

   Мақола19988 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.199253

3. Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M photodiodes

   Д. М. Шукурова, Andrey Orekhov, B. Z. Sharipov +2

   МақолаSemiconductor materials and interfacesTechnical Physics20114 иқтибос

   ABIABI:AkademIndex/openalex/2011.article.000139

4. Photoconduction amplification and quenching in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterostructures

   T. S. Kamilov, I. V. Ernst, A. Yu. Samunin

   МақолаSemiconductor materials and interfacesTechnical Physics20142 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.199247

5. Analysis of the induced photothermal conduction in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions

   T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1

   МақолаSemiconductor materials and interfacesTechnical Physics20132 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.614844

6. Photocurrent saturation and negative differential photoconductivity in Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions

   T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1

   МақолаSemiconductor materials and interfacesTechnical Physics20131 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.625774