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9 та иш

Иш: Deep-level transient spectroscopy: A new method to characterize traps in semiconductors

  1. The radiation-induced defects production in P-type silicon doped by impurities of transitional elements

    Marat S. Yunusov, M. Kаrimov, M. N. Alkulov +1

    МақолаSilicon and Solar Cell TechnologiesRadiation effects and defects in solids20003 иқтибос
    ABI

  2. Capacitive Spectroscopy of Deep Levels in Silicon with Samarium Impurity

    Sharifa B. Utamuradova, Khojakbar S. Daliev, Shakhrukh Kh. Daliev +1

    МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20232 иқтибос
    ABI

  3. Interaction of deep impurities with radiation defects in n-Si at γ-irradiation

    Sh. Makhkamov, M. Kаrimov, Z. M. Khakimov +4

    МақолаSilicon and Solar Cell TechnologiesRadiation effects and defects in solids20052 иқтибос
    ABI

  4. Deep Level Transient Spectroscopy of Silicon, Doped by Zirconium

    Shakhrukh Kh. Daliev

    МақолаIon-surface interactions and analysisInternational Journal for Research in Applied Science and Engineering Technology20181 иқтибос
    ABI

  5. Influence of the Post-Diffusion Hardening Rate and Thermal Treatment on the Thermal Stability of the Charge-Carrier Lifetime in Overcompensated n-Si<B, S>

    M. Kаrimov, A. K. Karakhodzhaev

    МақолаSemiconductor materials and interfacesRussian Physics Journal20010 иқтибос
    ABI

  6. The effect of thermal treatment on the charge-carrier lifetime in nickel-doped silicon

    M. Kаrimov, A. O. Kurbanov, С. З. Зайнабидинов +1

    МақолаSilicon and Solar Cell TechnologiesRussian Physics Journal20060 иқтибос
    ABI

  7. Features of the Formation of Impurity-Defective Centers in Silicon Doped with Chromium

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Yuldoshali Ravshanov +30

    МақолаSilicon and Solar Cell TechnologiesInternational Journal of Emerging Trends in Engineering Research20200 иқтибос
    ABI

  8. EFFECT OF TEMPERATURE TREATMENT ON THE ENERGY SPECTRUM OF DEFECTS IN SILICON DOPED WITH MOLYBDENUM

    Kh.S. Daliev, Anifa Paluanova

    МақолаAdvanced Materials and Semiconductor TechnologiesEurasianUnionofScientists20210 иқтибос
    ABI

  9. Effect of Dysprosium Atoms Introduced During the Growth Phase on the Formation of Radiation Defects in Silicon Crystals

    Kh.S. Daliev, Sharifa B. Utamuradova, Shakhrukh Kh. Daliev +2

    МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 иқтибос
    ABI