Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Anomalous Behavior of Lateral C–V Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer

1. The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

   M. M. Khalilloev, B. O. Jabbarova, Aslan Nasirov

   МақолаAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20192 иқтибос

   ABIABI:AkademIndex/openalex/2019.article.000603

2. The Influence of a Single Charged Interface Trap on the Subthreshold Drain Current in FinFETs with Different Fin Shapes

   A.E. Abdikarimov

   МақолаAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20201 иқтибос

   ABIABI:AkademIndex/openalex/2020.article.001438

3. Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs

   Zamira Atamuratova, Ahmed Yusupov, Jean Chamberlain Chedjou +1

   МақолаSemiconductor materials and devicese-Journal of Surface Science and Nanotechnology20220 иқтибос

   ABIABI:AkademIndex/openalex/2022.article.006400