N. A. Matchanov

29 ta ish

Starodubtsev Physicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, 100084, Uzbekistan

1. Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers

   I. G. Atabaev, N. A. Matchanov, M. U. Hajiev +2

   MaqolaSemiconductor materials and devicesSemiconductors20100 iqtibos

   ABIABI:AkademIndex/openalex/2010.article.000173

2. Effect of surface chemical treatments on Ti-p-Si1 − x Gex and Ni-p-Si1 − x Ge x contact properties

   I. G. Atabaev, M. U. Hajiev, N. A. Matchanov +2

   MaqolaSemiconductor materials and interfacesSemiconductors20100 iqtibos

   ABIABI:AkademIndex/openalex/2010.article.000362

3. Output parameters for thermoelectric modules based on metal/Last(T) hot side contacts. Part II

   N. A. Matchanov, Muhammad Farhan, Jonathan D’Angelo +5

   MaqolaAdvanced Thermoelectric Materials and DevicesApplied Solar Energy20120 iqtibos

   ABIABI:AkademIndex/openalex/2012.article.000353

4. Investigation of Some Properties of Nickel Germanosilicides Formed on the Surface of Bulk Si1 – xGex Crystals

   N. A. Matchanov, K. A. Bobojonov

   MaqolaSemiconductor materials and interfacesApplied Solar Energy20220 iqtibos

   ABIABI:AkademIndex/openalex/2022.article.010466