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Н. Ф. Зикриллаев

42 ta ish

Tashkent State Technical University, Tashkent, 100097, Uzbekistan

  1. Silicon photovoltaic cells with clusters of nickel atoms

    М. К. Бахадырханов, S. A. Valiev, Н. Ф. Зикриллаев +3

    MaqolaSilicon Nanostructures and PhotoluminescenceApplied Solar Energy201635 iqtibos
    ABI

  2. Ferromagnetic states of p-type silicon doped with Mn

    Ziyodbek A. Yunusov, Sh. U. Yuldashev, Kh. T. Igamberdiev +5

    MaqolaQuantum and electron transport phenomenaJournal of the Korean Physical Society201411 iqtibos
    ABI

  3. Anomalous Photoelectric Phenomena in Silicon with Nanoclusters of Manganese Atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев +1

    MaqolaSemiconductor materials and interfacesSemiconductors20218 iqtibos
    ABI

  4. SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY

    Н. Ф. Зикриллаев, S. Koveshnikov, С. Б. Исамов +2

    MaqolaSemiconductor materials and interfacesSemiconductors20228 iqtibos
    ABI

  5. Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics

    Н. Ф. Зикриллаев, G. A. Kushiev, Sergey V. Koveshnikov +3

    MaqolaSemiconductor materials and interfacesEast European Journal of Physics20238 iqtibos
    ABI

  6. Functional Capabilities of Silicon with Nanoclusters of Manganese Atoms

    M. K. Bakhadirkhanov, С. Б. Исамов, Н. Ф. Зикриллаев +4

    MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20208 iqtibos
    ABI

  7. Infrared quenching of photoconduction in silicon with multicharge manganese clusters

    M. K. Bachadyrchanov, С. Б. Исамов, Н. Ф. Зикриллаев +1

    MaqolaSilicon Nanostructures and PhotoluminescenceSurface Engineering and Applied Electrochemistry20136 iqtibos
    ABI

  8. Current-voltage behavior of silicon containing nanoclusters of manganese atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев

    MaqolaSilicon Nanostructures and PhotoluminescenceInorganic Materials20146 iqtibos
    ABI

  9. IR photodetectors in the range of λ = 1.5–8 μm, based on silicon with multicharged nanoclusters of manganese atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев

    MaqolaAdvanced Semiconductor Detectors and MaterialsRussian Microelectronics20126 iqtibos
    ABI

  10. Magnetic Properties of Silicon Doped with Impurity Atoms of Europium

    Н. Ф. Зикриллаев, G. H. Mavlonov, Levent Trabzon +4

    MaqolaMagnetic properties of thin filmsJournal of Nano- and Electronic Physics20235 iqtibos
    ABI

  11. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

    Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

    MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20235 iqtibos
    ABI

  12. Optical Properties of GexSi1 – x Binary Compounds in Silicon

    Н. Ф. Зикриллаев, Habibjon Kushiev, Shahzodbek I. Hamrokulov +1

    MaqolaSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20235 iqtibos
    ABI

  13. Quantometers of solar IR radiation based on silicon with multicharged nanoclusters of magnesium atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев +1

    MaqolaOptical and Acousto-Optic TechnologiesApplied Solar Energy20125 iqtibos
    ABI

  14. Enhancing the Efficiency of Silicon Solar Cells through Nickel Doping

    Z. T. Kenzhaev, Н. Ф. Зикриллаев, K. S. Ayupov +3

    MaqolaSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20234 iqtibos
    ABI

  15. Correlation between the material parameters and conditions for the excitation of recombination waves in Si〈;S〉

    М. К. Бахадырханов, U. Kh. Kurbanova, Н. Ф. Зикриллаев

    MaqolaSemiconductor materials and interfacesSemiconductors19994 iqtibos
    ABI

  16. Self-Oscillatory Processes in Silicon, Problems and Prospects for Research, and Their Application in Electronics

    Н. Ф. Зикриллаев, M. M. Shoabdurakhimova, K. S. Ayupov +2

    MaqolaSemiconductor Quantum Structures and DevicesSurface Engineering and Applied Electrochemistry20243 iqtibos
    ABI

  17. Effect of Compensation Degree and Concentration of Impurity Electroactive Selenium Atoms on Current Auto-Oscillation Parameters in Silicon

    Н. Ф. Зикриллаев, K. S. Ayupov, Manzura M. Shoabdirahimova +4

    MaqolaSilicon and Solar Cell TechnologiesEast European Journal of Physics20232 iqtibos
    ABI

  18. The Mechanism of the Formation of Binary Compounds Between Zn and S Impurity Atoms in Si Crystal Lattice

    Н. Ф. Зикриллаев, Maruf K. Khakkulov, B. O. Isakov

    MaqolaSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20232 iqtibos
    ABI

  19. Codiffusion of Gallium and Phosphorus Atoms in Silicon

    Н. Ф. Зикриллаев, С. Б. Исамов, S. Koveshnikov +2

    MaqolaSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20232 iqtibos
    ABI

  20. Spectral range of current self-oscillation in manganese-doped silicon

    M. K. Bakhadirkhanov, Н. Ф. Зикриллаев, K. S. Ayupov +3

    MaqolaSilicon and Solar Cell TechnologiesTechnical Physics20062 iqtibos
    ABI

  21. An Infrared Radiation Photoresistor Based on Silicon with Nanoclusters of Manganese Atoms

    M. K. Bakhadirkhanov, Sh. N. Ibodullaev, Н. Ф. Зикриллаев +1

    MaqolaSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters20212 iqtibos
    ABI

  22. Elaboration of physical fundamentals of nanosized structures on the basis of S++Mn−− and Se++Mn−− molecule formation in silicon lattice

    М. К. Бахадырханов, U. X. Sodikov, Н. Ф. Зикриллаев +1

    MaqolaChalcogenide Semiconductor Thin FilmsSurface Engineering and Applied Electrochemistry20071 iqtibos
    ABI

  23. Negative magnetoresistance in silicon doped with manganese

    Н. Ф. Зикриллаев, Х. М. Илиев, Г. Х. Мавлонов +2

    MaqolaSemiconductor materials and interfacesE3S Web of Conferences20231 iqtibos
    ABI

  24. Silicon with Binary GexSi1 – x Compounds

    Н. Ф. Зикриллаев, K. S. Ayupov, N. Narkulov +3

    MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20241 iqtibos
    ABI

  25. Composition of Silicon Alloyed with Gallium and Phosphorus Atoms

    Н. Ф. Зикриллаев, S. Koveshnikov, X. S. Turekeev +1

    MaqolaSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20241 iqtibos
    ABI