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Uzbekiston Fizika Zhurnali

81 ta ish

Jurnal

  1. Magnetic properties of intermetallic REM-TM systems at high temperatures

    O. K. Kuvandikov, H. O. Shakarov, М. К. Салахитдинова

    MaqolaIntermetallics and Advanced Alloy PropertiesUzbekiston Fizika Zhurnali20011 iqtibos
    ABI

  2. Effect of the semiconductor-insulator interface on the characteristics of the metal-insulator-semiconductor structures

    С. И. Власов, Fayzulla A. Saparov, B.Kh. Kuchkarov

    MaqolaElectric Power Systems and ControlUzbekiston Fizika Zhurnali20091 iqtibos
    ABI

  3. Effect of Cr"4"+ impurities in Nd:Cr:GSGG and Nd:Cr:YAG laser materials on parameters of lasers at solar pumping

    Sh. Payziyev, С. А. Бахрамов, F. Shayimov +1

    MaqolaSolid State Laser TechnologiesUzbekiston Fizika Zhurnali20151 iqtibos
    ABI

  4. Probabilities of many-body decays of fermions

    K. R. Nasriddinov, N.A. Sarikov

    MaqolaQuantum Chromodynamics and Particle InteractionsUzbekiston Fizika Zhurnali19920 iqtibos
    ABI

  5. Influence of the Bremsstrahlung on the radiative induction of charge and interface states in MOS transistors

    A. É. Atamuratov, Kh.S. Daliev, S.Z. Zajnabidinov

    MaqolaIntegrated Circuits and Semiconductor Failure AnalysisUzbekiston Fizika Zhurnali19920 iqtibos
    ABI

  6. Electric field gradient tensor parameters at REM sites of RBa 2 Cu 5 O 7 lattices determined by emission Moessbauer spectroscopy with Ga-67 (Zn-67) isotopes

    N.Yu. Turaev, Z.Yu. Turaev, Sagatov +2

    MaqolaPhysics of Superconductivity and MagnetismUzbekiston Fizika Zhurnali19950 iqtibos
    ABI

  7. Multifragmentation of carbon nucleus of momentum 4,2 GeV/c per nucleon from inelastic collisions with propanum and tantalum nuclei. 3. Evolution of impulse characteristics of fragments in rest frame of fragmenting nucleus

    A. I. Bondarenko, D.A. Karshiev, G.M. Chernov +1

    MaqolaLaser-induced spectroscopy and plasmaUzbekiston Fizika Zhurnali19960 iqtibos
    ABI

  8. Copper surrounding in Y 1-x Ca x Ba 2-y La y Cu 3 O 6+z

    U. Abdurakhmanov, Sagatov, П. П. Серегин

    MaqolaAdvanced Condensed Matter PhysicsUzbekiston Fizika Zhurnali19960 iqtibos
    ABI

  9. Influence of target density on a formation of multiply charged HoO and YO ions of laser plasma

    M.R. Bedilov, R. T. Khaidarov, B.Kh. Yakubov +1

    MaqolaLaser-induced spectroscopy and plasmaUzbekiston Fizika Zhurnali19970 iqtibos
    ABI

  10. Carrier-removal rates under the action of gamma radiation in n-type compensated silicon

    Yunusov, M. Kаrimov, Zhalelov

    MaqolaSilicon and Solar Cell TechnologiesUzbekiston Fizika Zhurnali19970 iqtibos
    ABI

  11. Influence of Frenkel's effect on the non-ideality coefficient of p-n junction in microwave field

    G. Gulyamov, Mukhammadjon G. Dadamirzaev

    MaqolaSemiconductor Quantum Structures and DevicesUzbekiston Fizika Zhurnali19980 iqtibos
    ABI

  12. Structure and composition of admixture precipitates of nickel in silicon

    S.Z. Zajnabidinov, N. A. Turgunov, Alisher Baxadirov

    MaqolaMaterial Properties and ApplicationsUzbekiston Fizika Zhurnali20000 iqtibos
    ABI

  13. Modification of structure and properties of semiconductor surface by ion implantation with active metals

    А.С. Рысбаев, Sh.H. Djuraev, A.M. Rahimov +2

    MaqolaMetal and Thin Film MechanicsUzbekiston Fizika Zhurnali20000 iqtibos
    ABI

  14. Degradation processes in photosensitive structures on the basis of big-blocked p-CdTe polycrystals

    Ш. А. Мирсагатов, A.I. Sultanov, Makhmudov +2

    MaqolaAdvanced Semiconductor Detectors and MaterialsUzbekiston Fizika Zhurnali20010 iqtibos
    ABI

  15. Functional possibilities of photo receivers with controllable spectrum

    Ш. А. Мирсагатов, B. U. Aĭtbaev, Makhmudov +1

    MaqolaInfrared Target Detection MethodologiesUzbekiston Fizika Zhurnali20010 iqtibos
    ABI

  16. Anomalous changing the magnetic properties of compounds of yttrium with [Nd, Gd]Al 3 (BO 3 ) 4 at high temperatures

    O.K. Kuvandykov, Kh. O. Shakarov, Z. M. Shodiev

    MaqolaCrystal Structures and PropertiesUzbekiston Fizika Zhurnali20020 iqtibos
    ABI

  17. Application of low-energy ion-implantation for creation of nano films on the surface of dielectric films CaF 2

    Д. А. Ташмухамедова

    MaqolaMetal and Thin Film MechanicsUzbekiston Fizika Zhurnali20040 iqtibos
    ABI

  18. Some physical properties of cotton fibers doped by iodine

    A. T. Mamadalimov, B.Eh. Turaev, T. A. Usmanov

    MaqolaTextile materials and evaluationsUzbekiston Fizika Zhurnali20040 iqtibos
    ABI

  19. Studying magnetic properties of La 0.8 Ag x MnO 3 manganates at high temperatures

    O.K. Kuvandykov, Kh. O. Shakarov, Z. M. Shodiev

    MaqolaMagnetic and transport properties of perovskites and related materialsUzbekiston Fizika Zhurnali20050 iqtibos
    ABI

  20. Effect of grain boundaries on a conductivity and current transport in A I I-B V l films

    T.M. Razykov, Smagul Karazhanov, A. Yu. Leĭderman +2

    MaqolaSemiconductor materials and devicesUzbekiston Fizika Zhurnali20050 iqtibos
    ABI

  21. Influence of thermal treatment on characteristics of silicon doped by lanthanium

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, E. K. Kalandarov +1

    MaqolaSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20060 iqtibos
    ABI

  22. The photoluminescence of p-CdTe columnar films

    Kh. Kh. Ismoilov, A. M. Abdugafurov, С. Х. Шамирзаев +2

    MaqolaAdvanced Semiconductor Detectors and MaterialsUzbekiston Fizika Zhurnali20070 iqtibos
    ABI

  23. Application of ion implantation for obtaining the nanofilms of metal silicides

    Б. Е. Умирзаков, Д. А. Ташмухамедова, B.A. Kadyrov

    MaqolaSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20080 iqtibos
    ABI

  24. Some peculiarities of current-voltage characteristics of nCdS-pCdTe-heterostructures with intermediate layer of d ≅ 1 μ m

    S. A. Muzafarova, Ш. А. Мирсагатов, A. Yu. Leĭderman +2

    MaqolaChalcogenide Semiconductor Thin FilmsUzbekiston Fizika Zhurnali20090 iqtibos
    ABI

  25. Determination of the surface state density on the semiconductor-dielectric interface in the structures Al-SiO 2 -Si and Al-SiO 2 -n-Si at low temperature

    G. Gulyamov, И. Н. Каримов, N. Yu. Sharibaev +1

    MaqolaSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20100 iqtibos
    ABI