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Semiconductor Quantum Structures and Devices

469 ta ish

  1. Preparation and Structure of Solid Solutions (Ge2)1−x–y(GaAs)x(ZnSe)y

    A. Sh. Razzokov, V. V. Girzhon, D. E. Koshchanova

    BobSemiconductor materials and interfacesAdvances in Science, Technology & Innovation/Advances in science, technology & innovation20250 iqtibos
    ABI

  2. The Study of Structure, Electrophysical, Physicomechanical and Optical Properties of Gaas with Oxygen Impurities and Doped Chromium

    M. Yu. Tashmetov, Abror Abdaminov, Khabibulla Djangabaev +2

    PreprintGaN-based semiconductor devices and materialsSSRN Electronic Journal20250 iqtibos
    ABI

  3. Comprehensive Numerical Modeling of Silicon Tunnel Junction for Application in Multijunction Monolithic Solar Cells

    A. É. Atamuratov, B. Q. Jumaboev, M. M. Khalilloev +3

    PreprintSemiconductor Quantum Structures and DevicesResearch Square20250 iqtibos
    ABI

  4. Physical mechanisms of structural, morphological, and property changes in ZnS and ZnSe under electron irradiation

    M Yu Tashmetov, A V Belushkin, Bakhtiyar Madaminov +1

    MaqolaSemiconductor Quantum Structures and DevicesJournal of Physics Condensed Matter20260 iqtibos
    ABI

  5. Temperature Dependence of the Chemical Potential of a Two-Dimensional Electron Gas in a Half-Filled landau Subband

    P. J. Baymatov, B. T. Abdulazizov, A. A. Saydaliev

    MaqolaQuantum and electron transport phenomenaJournal of Low Temperature Physics20260 iqtibos
    ABI

  6. Composition-Driven Band Engineering and Temperature Effects in pSi/nCdmZn1−mS Heterojunctions

    Jo`shqin Abdullayev, Jonibek Shakirovich Abdullayev, Ibrokhim Bayramdurdiyevich Sapaev +3

    MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20260 iqtibos
    ABI

  7. Impact of incomplete ionization on the critical electric field of <i>p</i> - <i>n</i> junction structures based on Si and GaAs

    J. Sh. Abdullayev, Dildora Qalandarova, M. Sh. Ibragimova

    MaqolaSilicon and Solar Cell TechnologiesLow Temperature Physics20260 iqtibos
    ABI

  8. Mathematical Analysis of the C-V of Nanowires Based on Si and GaAs

    Dostonbek Abduraimov, Avaz Ergashev, Mehrigiyo Uktamova +3

    MaqolaNanowire Synthesis and ApplicationsEPJ Web of Conferences20260 iqtibos
    ABI

  9. Modeling the temperature dependence of magneto-optical absorption coefficients in nanostructured semiconductors

    U. I. Erkaboev, R. G. Rakhimov, N. A. Sayidov

    MaqolaMagneto-Optical Properties and ApplicationsIndian Journal of Physics20260 iqtibos
    ABI

  10. Temperature-dependent dark I–V transport and barrier inhomogeneity in VTE-grown CdTe/Si heterojunction

    I.B. Sapaev, S.O. Sadullaev, Kh. N. Juraev +4

    MaqolaSemiconductor materials and interfacesResults in Physics20260 iqtibos
    ABI

  11. Magnetic field and temperature-dependent band gap modeling in narrow-gap quantum well semiconductors

    Ulugbek Erkaboev, R. G. Rakhimov, J. I. Mirzaev +3

    MaqolaSemiconductor Quantum Structures and DevicesInternational Journal of Modern Physics B20260 iqtibos
    ABI

  12. Role of Deep Defect States in Anomalous Photovoltage Relaxation of Polycrystalline Silver-Doped Cadmium Telluride Thin Films

    O R Nurmatov, Dilmuhammad Kh. Tolaboyev, Javokhirbek A. Akhmadaliyev +5

    MaqolaChalcogenide Semiconductor Thin FilmsInformacije MIDEM - Journal of Microelectronics Electronic Components and Materials20260 iqtibos
    ABI

  13. Thermal Expansion Characteristics of Planar and Radial Si/GaAs p–n Heterojunctions

    Jonibek Sh. Abdullayev, M. Sh. Ibragimova, J. Sh. Abdullayev +1

    MaqolaSemiconductor Quantum Structures and DevicesEast European Journal of Physics20260 iqtibos
    ABI

  14. Cryogenic Material and Electrophysical Changes in Si and GaAs

    Jonibek Sh. Abdullayev, M. Sh. Ibragimova, J. Sh. Abdullayev +1

    MaqolaSilicon and Solar Cell TechnologiesEast European Journal of Physics20260 iqtibos
    ABI

  15. Modeling the Temperature and Magnetic Field Dependence of the Band Gap in Narrow-Zone Quantum Well Semiconductors

    U. I. Erkaboev, U.Sh. Turdiev, M.G. Dadamirzaev +2

    MaqolaSemiconductor Quantum Structures and DevicesEast European Journal of Physics20260 iqtibos
    ABI

  16. Influence of Deformation on Quantum Oscillations in Low-Dimensional Semiconductor

    U.Sh. Turdiev, M.G. Dadamirzaev, U. I. Erkaboev +4

    MaqolaSemiconductor Quantum Structures and DevicesEast European Journal of Physics20260 iqtibos
    ABI

  17. Magnetic field and temperature dependent band gap modeling in narrow-gap quantum well semiconductors

    Ulugbek Erkaboev, R. G. Rakhimov, J. I. Mirzaev +3

    MaqolaSemiconductor Quantum Structures and DevicesJournal of Computational Electronics20260 iqtibos
    ABI

  18. Comprehensive study of GaAs(O):Cr after gamma irradiation: x-ray analysis, surface morphology, and microhardness properties

    M Yu Tashmetov, Abror Abdaminov

    MaqolaRadiation Effects in ElectronicsPhysica Scripta20260 iqtibos
    ABI

  19. Optical and electrophysical properties of GaAs(O):Cr

    M.Yu. Tashmetov, Kh.N. Djangabaev, A.B. Abdaminov +4

    MaqolaGa2O3 and related materials«Узбекский физический журнал»20260 iqtibos
    ABI