Ushbu ish iqtibos qilgan ishlar

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Ish: Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure

1. Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe

   M. E. Levinshteĭn, Sergey Rumyantsev, M. S. Shur

   Kitob20012 iqtibos

   ABIABI:AkademIndex/2026.other.218796

2. Fabrication of 6H-SiC light-emitting diodes by a rotation dipping technique: Electroluminescence mechanisms

   M. Ikeda, Tomokatsu Hayakawa, Shin-ichi Yamagiwa +2

   Maqola19792 iqtibos

   ABIABI:AkademIndex/2026.other.381991

3. High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

   Anatoly M. Strel’chuk, A. А. Lebedev, Alexey N. Kuznetsov +2

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20042 iqtibos

   ABIABI:AkademIndex/2026.other.381992

4. Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures

   Anatoly M. Strel’chuk, Evgenia V. Kalinina, Andrey O. Konstantinov +1

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesMaterials science forum20052 iqtibos

   ABIABI:AkademIndex/2026.other.381994

5. Temperature coefficient of the energy gap of β-silicon carbide

   Richard Dalven

   Maqola19652 iqtibos

   ABIABI:AkademIndex/2026.other.381995

6. Free exciton luminescence in 3C, 4H, 6H, and 15R SiC

   M. Ikeda, H. Matsunami

   Maqola19802 iqtibos

   ABIABI:AkademIndex/2026.other.381996

7. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/2026.other.381993

8. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/2026.other.381997

9. Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure

   Anatoly M. Strel’chuk, A. А. Lebedev, N.S. Savkina +1

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20071 iqtibos

   ABIABI:AkademIndex/2026.other.381998