Asosiy kontentga oʻtish
AkademIndex

Xizmatlar

← Ishga qaytish

Ushbu ish iqtibos qilgan ishlar

22 ta ish

Ish: Spectral Dependence of Optical Absorption of 4<i>H</i>-SiC Doped with Boron and Aluminum

  1. Deep level centers in silicon carbide: A review

    A. А. Lebedev

    Sharh maqola19999 iqtibos
    ABI

  2. Investigation of boron diffusion in 6H-SiC

    Yu Gao, Stanislav I. Soloviev, T. S. Sudarshan

    Maqola20035 iqtibos
    ABI

  3. Oxide film assisted dopant diffusion in silicon carbide

    Chin‐Che Tin, Suwan Mendis, Kerlit Chew +6

    MaqolaSilicon and Solar Cell TechnologiesThin Solid Films20105 iqtibos
    ABI

  4. Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

    Iikham G. Atabaev, Tojiddin M. Saliev, É. N. Bakhranov +6

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20105 iqtibos
    ABI

  5. Influence of Defects on Low Temperature Diffusion of Boron in SiC

    I. G. Atabaev, Tojiddin M. Saliev, Dilmurad SAIDOV +5

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20114 iqtibos
    ABI

  6. Negative secondary ion mass spectra under Cs+ ion bombardment of the p-SiC-〈B〉-surface

    I. G. Atabaev, Timur Saliev, Б.Г. Атабаев +1

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20114 iqtibos
    ABI

  7. Oxidation kinetics of hot-pressed silicon carbide

    Subhash C. Singhal

    Maqola19764 iqtibos
    ABI

  8. A new approach in impurity doping of 4H-SiC using silicidation

    Chin‐Che Tin, Suwan Mendis, Michelle T. Tin +2

    Maqola20134 iqtibos
    ABI

  9. Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al

    I. G. Atabaev, Kh. N. Juraev, V. A. Pak

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesAdvances in Condensed Matter Physics20174 iqtibos
    ABI

  10. Effect of deep levels on current excitation in 6H-SiC diodes

    N.I. Kuznetsov, J. A. Edmond

    Maqola19973 iqtibos
    ABI

  11. The Method of Solid State Impurity Diffusion and Doping In 4H-SiC

    Suwan Mendis, Chin-che Tin, Ilkham G. Atabaev +1

    Maqola20133 iqtibos
    ABI

  12. Phonons in 3C-, 4H-, and 6H-SiC

    Hermann Nienhaus, T.U. Kampen, Winfried Mönch

    Maqola19952 iqtibos
    ABI

  13. Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode

    Koji Nakayama, Ryosuke Ishii, Katsunori Asano +3

    Maqola20112 iqtibos
    ABI

  14. Shallow acceptor levels in 4H- and 6H-SiC

    S. R. Smith, A. O. Evwaraye, W. C. Mitchel +1

    Maqola19992 iqtibos
    ABI

  15. Research of <i>p</i>‐<i>i</i>‐<i>n</i> Junctions Based on 4<i>H</i>‐SiC Fabricated by Low‐Temperature Diffusion of Boron

    I. G. Atabaev, Kh. N. Juraev

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesAdvances in Materials Science and Engineering20182 iqtibos
    ABI

  16. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  17. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  18. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  19. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  20. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  21. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  22. Sarlavhasiz

    Boshqa1 iqtibos
    ABI