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Ish: Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

  1. Sarlavhasiz

    Boshqa1 274 iqtibos
    ABI

  2. Current Injection in Solids

    A. M. Stoneham

    Maqola197027 iqtibos
    ABI

  3. Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x

    A.S. Saidov, A. Sh. Razzakov, V.A. Risaeva +1

    MaqolaChalcogenide Semiconductor Thin FilmsMaterials Chemistry and Physics200126 iqtibos
    ABI

  4. Current injection in solids

    Murray A. Lampert, Peter Mark

    Kitob197016 iqtibos
    ABI

  5. X-ray diffraction diagnostics methods as applied to highly doped semiconductor single crystals

    I. L. Shul’pina, R. N. Kyutt, В. В. Ратников +3

    Maqola201010 iqtibos
    ABI

  6. Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)<sub>1−<i>x</i></sub>(ZnSe)<sub><i>x</i></sub> with Nanocrystals

    A.S. Saidov, Sh. N. Usmonov, D. V. Saparov

    MaqolaOchiq kirishQuantum Dots Synthesis And PropertiesAdvances in Materials Science and Engineering20198 iqtibos
    ABI

  7. Dilute nonisovalent (II-VI)-(III-V) semiconductor alloys: Monodoping, codoping, and cluster doping in ZnSe-GaAs

    L. G. Wang, Alex Zunger

    Maqola20038 iqtibos
    ABI

  8. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

    A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +4

    MaqolaChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20118 iqtibos
    ABI

  9. Peculiarities of photosensitivity of n(GaAs)–p(GaAs)1–x–y (ZnSe) x (Ge2) y structures with quantum dots

    A.S. Saidov, С. З. Зайнабидинов, M. U. Kalanov +2

    MaqolaSemiconductor Quantum Structures and DevicesApplied Solar Energy20156 iqtibos
    ABI

  10. Properties of Semiconductor Alloys

    Sadao Adachi

    Kitob20096 iqtibos
    ABI

  11. Epitaxial growth of ZnSe on GaAs with the use of the ZnSe compound as the source

    Sergey P. Suprun, V. N. Sherstyakova, E. V. Fedosenko

    Maqola20095 iqtibos
    ABI

  12. Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films

    S.Z. Zaynabidinov, A.S. Saidov, A. Yu. Leĭderman +4

    MaqolaSemiconductor Quantum Structures and DevicesSemiconductors20165 iqtibos
    ABI

  13. Effect of nonstoichiometry and doping on the photoconductivity spectra of GeSe layered crystals

    Д. И. Блецкан, J. J. Madyar, V. N. Kabaciy

    Maqola20063 iqtibos
    ABI

  14. The synthesis and photoelectric properties of Si-(Si2)1−x(ZnS)x epitaxial structures

    Б. Сапаев, A.S. Saidov

    MaqolaSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters20043 iqtibos
    ABI

  15. Cation variations at semiconductor interfaces: ZnSe(001)/GaAs(001) superlattices

    H. H. Farrell, Randall A. LaViolette

    Maqola20043 iqtibos
    ABI

  16. Sarlavhasiz

    Boshqa3 iqtibos
    ABI

  17. MOVPE growth and characterization of ZnSe-GaAs heterovalent heterostructures

    Mitsuru Funato, Shizυo Fujita, Shigeo Fujita

    Maqola19952 iqtibos
    ABI

  18. Chemical and structural aspects of annealed ZnSe/GaAs(001) heterostructures

    D. H. Mosca, W. H. Schreiner, Edson Massayuki Kakuno +6

    Maqola20022 iqtibos
    ABI

  19. GaAs/Ge heterostructure photovoltaic cells fabricated by a combination of MOCVD and zinc diffusion techniques

    V. M. Andreev, В. П. Хвостиков, N. A. Kalyuzhnyĭ +3

    Maqola20042 iqtibos
    ABI

  20. The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1− x(ZnSe)x, Ge-(Ge2)1−x(ZnSe)x, GaP-(Ge2)1−x (ZnSe)x, and Si-(Ge2)1−x(ZnSe)x

    A.S. Saidov, É. A. Koshchanov, A. Sh. Razzakov

    MaqolaPhase-change materials and chalcogenidesTechnical Physics Letters19982 iqtibos
    ABI

  21. Anion variations at semiconductor interfaces: ZnSe(100)/GaAs(100) superlattices

    H. H. Farrell, Randall A. LaViolette

    Maqola20052 iqtibos
    ABI

  22. Heat-voltaic effect of pSi-n(ZnSe)1 − x − y (Si2) x (GaP) y structures

    A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +1

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20102 iqtibos
    ABI

  23. Effect of high intrinsic ion concentrations on electron energies in solid solutions of III–V and II–VI semiconductors

    Maurice Glicksman, W. D. Kraeft

    Maqola19852 iqtibos
    ABI

  24. Electric and luminescence properties of GaAs-AIIBIVCV2 single crystals

    I. K. Polushina, Yu. V. Rud, V. Yu. Rud’

    Maqola19992 iqtibos
    ABI

  25. Tailoring Heterovalent Interface Formation with Light

    Kwangwook Park, Kirstin Alberi

    Maqola20172 iqtibos
    ABI