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16 ta ish

Ish: Thermal stability parameters of silicon doped with nickel impurity atoms

  1. Nickel: A very fast diffuser in silicon

    Jeanette Lindroos, David P. Fenning, D. J. Backlund +5

    MaqolaOchiq kirish201323 iqtibos
    ABI

  2. Influence of electrically neutral nickel atoms on electrical and recombination parameters of silicon

    М. К. Бахадырханов, B. K. Ismaylov, С. А. Тачилин +2

    MaqolaOchiq kirish202012 iqtibos
    ABI

  3. Radiation Stability of Nickel Doped Solar Cells

    К. А. Исмайлов, Z. T. Kenzhaev, S. Koveshnikov +2

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesPhysics of the Solid State202210 iqtibos
    ABI

  4. Clusters of impurity nickel atoms and their migration in the crystal lattice of silicon

    B. K. Ismaylov, N. F. Zikrillayev, К. А. Исмайлов +1

    MaqolaOchiq kirishMaterial Science and ThermodynamicsPhysical Sciences and Technology20237 iqtibos
    ABI

  5. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

    Xalmurat M. Iliyev, В. Б. Оджаев, Sobir B. Isamov +5

    MaqolaOchiq kirishSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20236 iqtibos
    ABI

  6. Interaction between multiply charged manganese nanoclusters and sulfur atoms in silicon

    Z.M. Saparniyazova, М. К. Бахадырханов, О. Э. Саттаров +4

    MaqolaSemiconductor materials and interfacesInorganic Materials20125 iqtibos
    ABI

  7. Development of an educational simulator’s working logic for the course “fundamentals of power supply”

    Mirkomil Melikuziev, Zarina Fayzrakhmanova, Anvar Akhmedov +1

    MaqolaEngineering and Agricultural InnovationsAIP conference proceedings20245 iqtibos
    ABI

  8. Formation of complexes consisting of impurity Mn atoms and group VI elements in the crystal lattice of silicon

    К. А. Исмайлов, X. M. Iliev, M. O. Tursunov +1

    Maqola20215 iqtibos
    ABI

  9. Suppression of harmful impurity atoms with clusters of nickel impurity atoms in a silicon lattice

    Ismaylov Bayrambay, Ismailov Kanatbay, Kamalov Khayratdin +1

    MaqolaSilicon and Solar Cell TechnologiesAIP conference proceedings20235 iqtibos
    ABI

  10. Issues of the design procedure for the power supply system

    Mirkomil Melikuziev, Saidbek Usmonaliev, Nodirbek Khudoyberdiev +2

    MaqolaEngineering and Agricultural InnovationsAIP conference proceedings20244 iqtibos
    ABI

  11. X-ray beam induced current—a synchrotron radiation based technique for the <i>in situ</i> analysis of recombination properties and chemical nature of metal clusters in silicon

    О. Ф. Вывенко, Tonio Buonassisi, A. A. Istratov +4

    Maqola20024 iqtibos
    ABI

  12. Physical mechanism of gettering of impurity Ni atom clusters in Si lattice

    B. K. Ismaylov, N. F. Zikrillayev, К. А. Исмайлов +1

    MaqolaOchiq kirish20244 iqtibos
    ABI

  13. The High-temperature analysis of silicon properties with manganese-oxygen binary complexes

    M. O. Tursunov, Khalmurat Iliev, B. K. Ismaylov

    MaqolaOchiq kirishSemiconductor materials and interfacesPhysical Sciences and Technology20243 iqtibos
    ABI

  14. Effect of ultrasound treatment on the electro-physical properties of the structure of Al-Al2O3-p-CdTe

    A.K. Uteniazov

    Maqola20193 iqtibos
    ABI

  15. The Physical mechanisms of gettering properties of nickel clusters in silicon solar cells

    Zoir Kenjayev, Khalmurat Iliev, Kanatbay A. Ismailov +4

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesPhysical Sciences and Technology20242 iqtibos
    ABI

  16. Composition of Silicon Alloyed with Gallium and Phosphorus Atoms

    Н. Ф. Зикриллаев, S. Koveshnikov, X. S. Turekeev +1

    MaqolaSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20241 iqtibos
    ABI