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23 ta ish

Ish: Raman Spectoroscopy of Silicon Single Crystals, Doped with Palladium and Irradiated by GammaRays

  1. Doping of semiconductors using radiation defects produced by irradiation with protons and alpha particles

    В. А. Козлов, Vitalii V. Kozlovski

    Maqola20018 iqtibos
    ABI

  2. Raman spectroscopy of PtSi formation at the Pt/Si(100) interface

    J. C. Tsang, Y. Yokota, R. Matz +1

    Maqola19846 iqtibos
    ABI

  3. Influence of Different Types of Radiation on the Crystal Structure of Silicon Monocrystals n-Si

    Sharifa B. Utamuradova, Dilmurod A. Rakhmanov, A.S. Abiyev

    MaqolaOchiq kirish20246 iqtibos
    ABI

  4. Iron contamination in silicon technology

    A. A. Istratov, H. Hieslmair, E. R. Weber

    Maqola20006 iqtibos
    ABI

  5. PROCESSES OF DEFECT FORMATION IN SILICON DIFFUSIONALLY DOPED WITH PLATINUM AND IRRADIATED WITH PROTONS

    Sh.B. Utamuradov, Shakhrukh Kh. Daliev, D.A. Rakhmanov +4

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesEurasian Physical Technical Journal20235 iqtibos
    ABI

  6. Picosecond-pulsed laser ablation of aluminum foils: crater morphology and plasma parameters

    Munisbek Akhmedov, Jurabek Sadullayev, Murodbek Vapayev +3

    MaqolaLaser-induced spectroscopy and plasmaEngineering Research Express20255 iqtibos
    ABI

  7. One and two-phonon Raman scattering from nanostructured silicon

    Igor Iatsunskyi, Grzegorz Nowaczyk, Stefan Jurga +3

    MaqolaOchiq kirish20155 iqtibos
    ABI

  8. Determining the material structure of microcrystalline silicon from Raman spectra

    C. Smit, R.A.C.M.M. van Swaaij, H. Donker +3

    MaqolaOchiq kirish20035 iqtibos
    ABI

  9. INFLUENCE OF ALPHA PARTICLES ON TECHNOLOGICAL IMPURITIES IN SILICON DOPED WITH PLATINUM

    Sharifa B. Utamuradova

    MaqolaOchiq kirish20255 iqtibos
    ABI

  10. Investigation of Sensitive Thermal Sensors Based on Si<Pt> and Si<Pd>

    Sharifa B. Utamuradova, Dilmurod A. Rakhmanov, A.S. Abiyev

    MaqolaOchiq kirishGas Sensing Nanomaterials and SensorsEast European Journal of Physics20244 iqtibos
    ABI

  11. Critical-point analysis of the two-phonon Raman spectrum of silicon

    K. Uchinokura, Tomoyuki Sekine, E. Matsuura

    Maqola19744 iqtibos
    ABI

  12. Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors

    Ioana Pintilie, G. Lindstroem, Alexandra Junkes +1

    Maqola20094 iqtibos
    ABI

  13. Resonant Raman scattering of a single layer of Si nanocrystals on a silicon substrate

    A. Wellner, Vincent Paillard, H. Coffin +2

    MaqolaOchiq kirish20043 iqtibos
    ABI

  14. The radiation-induced defects production in P-type silicon doped by impurities of transitional elements

    Marat S. Yunusov, M. Karimov, M. N. Alkulov +1

    MaqolaSilicon and Solar Cell TechnologiesRadiation effects and defects in solids20003 iqtibos
    ABI

  15. The optical properties of luminescence centres in silicon

    Gordon Davies

    Maqola19893 iqtibos
    ABI

  16. Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors

    C. Altana, L. Calcagno, C. Ciampi +8

    Maqola20232 iqtibos
    ABI

  17. Sarlavhasiz

    Boshqa2 iqtibos
    ABI

  18. Оbtaining and Electrophysical Properties of (Ge2)1 – x(GaAs)x Solid Solutions

    A. Sh. Razzokov, A.S. Saidov, D.E. Koshchanova +2

    Maqola20252 iqtibos
    ABI

  19. Morphological Studies of (Ge2)1-X(ZnSe)X Solid Solutions

    A.Sh. Razzokov, A.S. Saidov, M.A. Shonazarova +2

    MaqolaOchiq kirishPhase-change materials and chalcogenidesEast European Journal of Physics20251 iqtibos
    ABI

  20. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  21. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  22. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  23. Sarlavhasiz

    Boshqa1 iqtibos
    ABI