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20 ta ish

Ish: Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET

  1. Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm

    Sylvain Barraud, Matthieu Berthomé, R. Coquand +7

    Maqola20127 iqtibos
    ABI

  2. Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors

    Antonio J. García‐Loureiro, Natalia Seoane, M. Aldegunde +4

    Maqola20117 iqtibos
    ABI

  3. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    MaqolaSemiconductor materials and devicesTechnical Physics Letters20186 iqtibos
    ABI

  4. Physical origin of negative differential resistance in SOI transistors

    Liam McDaid, Steven Hall, Phil Mellor +2

    Maqola19895 iqtibos
    ABI

  5. Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits

    Woojin Ahn, SangHoon Shin, Chang‐Ming Jiang +3

    Maqola20185 iqtibos
    ABI

  6. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

    A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20174 iqtibos
    ABI

  7. Role of non-uniform channel doping in improving the nanoscale JL DG MOSFET reliability against the self-heating effects

    H. Ferhati, Fouzi Douak, F. Djeffal

    Maqola20173 iqtibos
    ABI

  8. Reduction of self-heating effect using selective buried oxide (SELBOX) charge plasma based junctionless transistor

    Amrish Kumar, Abhinav Gupta, Sanjeev Rai

    Maqola20183 iqtibos
    ABI

  9. Numerical study on the self-heating effects for vacuum/high-k gate dielectric tri-gate FinFETs

    Guohe Zhang, Junhua Lai, Shengli Zhu +3

    Maqola20193 iqtibos
    ABI

  10. SOI versus bulk-silicon nanoscale FinFETs

    J.G. Fossum, Zhenming Zhou, L. Mathew +1

    Maqola20092 iqtibos
    ABI

  11. Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

    A. É. Atamuratov, M. M. Khalilloev, A.E. Abdikarimov +4

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20172 iqtibos
    ABI

  12. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +3

    MaqolaOchiq kirishSemiconductor materials and devicesApplied Sciences20202 iqtibos
    ABI

  13. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

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