Ushbu ish iqtibos qilgan ishlar

10 ta ish

Ish: Simulation of Random Telegraph Noise in Nanometer nMOSFET Induced by Interface and Oxide Trapped Charge

1. Large random telegraph noise in sub-threshold operation of nano-scale nMOSFETs

   J. P. Campbell, Lihua Yu, Kin P. Cheung +4

   Maqola20093 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.397912

2. Ultralow-Power Design in Near-Threshold Region

   Dejan Marković, C.C. Wang, Louis P. Alarcón +2

   Maqola20102 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.570274

3. Random telegraph signal amplitudes in sub 100 nm (decanano) MOSFETs: a 3D 'Atomistic' simulation study

   Asen Asenov, R. Balasubramaniam, A. R. Brown +2

   Maqola20022 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.573066

4. RTS amplitudes in decananometer MOSFETs: 3-D simulation study

   Asen Asenov, R. Balasubramaniam, A. R. Brown +1

   Maqola20032 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.664521

5. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.664517

6. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.664518

7. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.664519

8. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.664520

9. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.664522

10. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/openalex/2026.other.664523