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17 ta ish

Ish: Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs

  1. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    MaqolaSemiconductor materials and devicesTechnical Physics Letters20186 iqtibos
    ABI

  2. Experimental Assessment of the Nonuniform Radiation-Induced Space-Charge Distribution in the Surface Region of Silicon

    A. É. Atamuratov, А. Yusupov, Khidir A. Adinaev

    MaqolaAdvanced Energy Technologies and Civil Engineering InnovationsInorganic Materials20015 iqtibos
    ABI

  3. Charge storage in a nitride-oxide-silicon medium by scanning capacitance microscopy

    R. C. Barrett, C. F. Quate

    Maqola19915 iqtibos
    ABI

  4. Impact of Off-State Stress and Negative Bias Temperature Instability on Degradation of Nanoscale pMOSFET

    Nam-Hyun Lee, Hyung-wook Kim, Bongkoo Kang

    Maqola20114 iqtibos
    ABI

  5. Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

    A. É. Atamuratov, Ahmed Yusupov, Zamira Atamuratova +2

    MaqolaSemiconductor materials and devicesApplied Sciences20203 iqtibos
    ABI

  6. Method to predict length dependency of negative bias temperature instability degradation in p-MOSFETs

    Jihoon Seo, Gang-Jun Kim, Donghee Son +3

    Maqola20163 iqtibos
    ABI

  7. Effect of oxide-trapped charge on the anomalous drain avalanche hot carrier degradation of a SiO2 dielectric nMOSFET

    Yeohyeok Yun, Jihoon Seo, Young-Kyu Kwon +1

    Maqola20193 iqtibos
    ABI

  8. Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer

    A. É. Atamuratov, Zamira Atamuratova, А. Yusupov +1

    MaqolaSemiconductor materials and devicesResults in Physics20183 iqtibos
    ABI

  9. Anomalous Behavior of Lateral C–V Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer

    Zamira Atamuratova, А. Yusupov, B. O. Khalikberdiev +1

    MaqolaSemiconductor materials and devicesTechnical Physics20193 iqtibos
    ABI

  10. An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes

    Lewis M. Terman

    Maqola19623 iqtibos
    ABI

  11. A propagation concept of negative bias temperature instability along the channel length in p-type metal oxide field effect transistor

    Boualem Djezzar, Hakim Tahi, Abdelmadjid Benabdelmoumene +1

    Maqola20132 iqtibos
    ABI

  12. Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFETs

    Souvik Mahapatra, C.D. Parikh, V. Ramgopal Rao +2

    Maqola20002 iqtibos
    ABI

  13. Method to estimate profile of threshold voltage degradation in MOSFETs due to electrical stress

    Yeohyeok Yun, Jihoon Seo, Donghee Son +1

    Maqola20182 iqtibos
    ABI

  14. Correlating the Radiation Response of MOS Capacitors and Transistors

    P.S. Winokur, J.R. Schwank, P. J. McWhorter +2

    Maqola19842 iqtibos
    ABI

  15. A reliable approach to charge-pumping measurements in MOS transistors

    G. Groeseneken, H.E. Maes, N. Beltran +1

    Maqola19842 iqtibos
    ABI

  16. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  17. Sarlavhasiz

    Boshqa1 iqtibos
    ABI