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10 ta ish

Ish: Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET

  1. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

    Isabelle Ferain, Cynthia A. Colinge, Jean-Pierre Colinge

    Maqola201111 iqtibos
    ABI

  2. Short-channel effects in SOI MOSFETs

    S. Veeraraghavan, J.G. Fossum

    Maqola19897 iqtibos
    ABI

  3. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    PreprintAdvancements in Semiconductor Devices and Circuit Design20216 iqtibos
    ABI

  4. Optimization of vertically stacked nanosheet FET immune to self-heating

    M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1

    MaqolaSemiconductor materials and devicesMicro and Nanostructures20235 iqtibos
    ABI

  5. Physical origin of negative differential resistance in SOI transistors

    Liam McDaid, Steven Hall, Phil Mellor +2

    Maqola19895 iqtibos
    ABI

  6. Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits

    Woojin Ahn, SangHoon Shin, Chang‐Ming Jiang +3

    Maqola20184 iqtibos
    ABI

  7. Self-Consistent Simulation of Heating Effects in Nanoscale Devices

    Dragica Vasileska, Stephen M. Goodnick, Katerina Raleva

    Maqola20093 iqtibos
    ABI

  8. Performance estimation of junctionless multigate transistors

    Chi‐Woo Lee, Isabelle Ferain, Aryan Afzalian +4

    Maqola20093 iqtibos
    ABI

  9. SOI versus bulk-silicon nanoscale FinFETs

    J.G. Fossum, Zhenming Zhou, L. Mathew +1

    Maqola20092 iqtibos
    ABI

  10. Sarlavhasiz

    Boshqa1 iqtibos
    ABI