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11 ta ish

Ish: Photoelectric properties of higher manganese silicide (HMS)-SilangleMnrangle-M structures

  1. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    MaqolaSemiconductor materials and interfacesApplied Solar Energy201921 iqtibos
    ABI

  2. Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M photodiodes

    Д. М. Шукурова, Andrey Orekhov, B. Z. Sharipov +2

    MaqolaSemiconductor materials and interfacesTechnical Physics20114 iqtibos
    ABI

  3. Electrophysical and thermoelectric properties and crystal structure of the formed Mn4Si7 thin vacuum coatings

    Б.Д. Игамов, Gunel Imanova, Vera Loboda +3

    MaqolaChalcogenide Semiconductor Thin FilmsOptical Materials X20244 iqtibos
    ABI

  4. Photoconduction amplification and quenching in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterostructures

    T. S. Kamilov, I. V. Ernst, A. Yu. Samunin

    MaqolaSemiconductor materials and interfacesTechnical Physics20142 iqtibos
    ABI

  5. Theoretical and experimental study of plasmon oscillation dispersion in Si and Ge crystals

    З. А. Исаханов, Б. Е. Умирзаков, Gunel Imanova

    MaqolaSurface and Thin Film PhenomenaOptical Materials X20242 iqtibos
    ABI

  6. Analysis of the induced photothermal conduction in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions

    T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1

    MaqolaSemiconductor materials and interfacesTechnical Physics20132 iqtibos
    ABI

  7. Nonselective polycrystalline radiation detectors based on higher manganese silicides

    T. S. Kamilov, A. Zh. Khusanov, М. К. Бахадырханов +1

    MaqolaSemiconductor materials and interfacesTechnical Physics Letters20021 iqtibos
    ABI

  8. Investigation of current instabilities in Mn4Si7–Si:Mn–Mn4Si7 and Mn4Si7–Si:Mn–M heterojunctions

    T. S. Kamilov, L. L. Aksenova, B. Z. Sharipov +1

    MaqolaSemiconductor materials and interfacesSemiconductors20151 iqtibos
    ABI

  9. Photocurrent saturation and negative differential photoconductivity in Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions

    T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1

    MaqolaSemiconductor materials and interfacesTechnical Physics20131 iqtibos
    ABI

  10. Features of Obtaining Films MnXSiY on Silicon by Solid-phase Reaction

    Komiljon Yakubov, Mutabar Latipova, Alibek Qodirov

    MaqolaSemiconductor materials and interfacesBulletin of Science and Practice20210 iqtibos
    ABI

  11. Temperature dependence changes in the physical and chemical properties of ZnO detected by powder diffractometry

    U.Kh. Kholikov, Ш. Т. Хожиев, И.О. Косимов +7

    MaqolaZnO doping and propertiesOptics Communications20250 iqtibos
    ABI