Ushbu ishga iqtibos qilgan ishlar

5 ta ish

Ish: Investigation of boron diffusion in 6H-SiC

1. Oxide film assisted dopant diffusion in silicon carbide

   Chin‐Che Tin, Suwan Mendis, Kerlit Chew +6

   MaqolaSilicon and Solar Cell TechnologiesThin Solid Films20105 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.390738

2. Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

   Iikham G. Atabaev, Tojiddin M. Saliev, É. N. Bakhranov +6

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20105 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.390741

3. Influence of Defects on Low Temperature Diffusion of Boron in SiC

   I. G. Atabaev, Tojiddin M. Saliev, Dilmurad SAIDOV +5

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20114 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.390730

4. Research of <i>p</i>‐<i>i</i>‐<i>n</i> Junctions Based on 4<i>H</i>‐SiC Fabricated by Low‐Temperature Diffusion of Boron

   I. G. Atabaev, Kh. N. Juraev

   MaqolaSilicon Carbide Semiconductor TechnologiesAdvances in Materials Science and Engineering20182 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.390749

5. Spectral Dependence of Optical Absorption of 4<i>H</i>-SiC Doped with Boron and Aluminum

   I. G. Atabaev, Kh. N. Juraev, M. U. Hajiev

   MaqolaSilicon Carbide Semiconductor TechnologiesJournal of Spectroscopy20181 iqtibos

   ABIABI:AkademIndex/openalex/2018.article.000197