Ushbu ish iqtibos qilgan ishlar

30 ta ish

Ish: Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

1. Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm

   Sylvain Barraud, Matthieu Berthomé, R. Coquand +7

   Maqola20126 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.386763

2. Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors

   Antonio J. García‐Loureiro, Natalia Seoane, M. Aldegunde +4

   Maqola20116 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.397911

3. Quantum corrections in the simulation of decanano MOSFETs

   Asen Asenov, A. R. Brown, J.R. Watling

   Maqola20034 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.532704

4. Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits

   Ming-Long Fan, Shao‐Yu Yang, Vita Pi‐Ho Hu +3

   Maqola20144 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.570277

5. Large random telegraph noise in sub-threshold operation of nano-scale nMOSFETs

   J. P. Campbell, Lihua Yu, Kin P. Cheung +4

   Maqola20093 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.397912

6. Performance estimation of junctionless multigate transistors

   Chi‐Woo Lee, Isabelle Ferain, Aryan Afzalian +4

   Maqola20093 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.428824

7. RTN distribution comparison for bulk, FDSOI and FinFETs devices

   Louis Gerrer, Salvatore Amoroso, Razaidi Hussin +1

   Maqola20143 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.570275

8. A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

   Ben Kaczer, J. Franco, Pieter Weckx +11

   Maqola20183 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.573068

9. Cascade Capture of Electrons in Solids

   M. Lax

   Maqola19602 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.357589

10. Semiconductor Surface Physics

    Robert H. Kingston

    Kitob19572 iqtibos

    ABIABI:AkademIndex/openalex/2026.other.573055

11. Random telegraph signal amplitudes in sub 100 nm (decanano) MOSFETs: a 3D 'Atomistic' simulation study

    Asen Asenov, R. Balasubramaniam, A. R. Brown +2

    Maqola20022 iqtibos

    ABIABI:AkademIndex/openalex/2026.other.573066

12. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/openalex/2026.other.573054

13. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/openalex/2026.other.573056

14. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/openalex/2026.other.573057

15. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/openalex/2026.other.573058

16. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/openalex/2026.other.573059

17. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/openalex/2026.other.573060

18. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/openalex/2026.other.573061

19. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/openalex/2026.other.573062

20. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/openalex/2026.other.573063

21. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/openalex/2026.other.573064

22. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/openalex/2026.other.573065

23. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/openalex/2026.other.573067

24. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/openalex/2026.other.573069

25. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/openalex/2026.other.573070