Semiconductor materials and devices

277 works

Corrosion resistance and antifriction properties of nitride multilayered coatings on the basis of V and Ta
Yaroslav Kravchenko, J. Partyka, О. В. Бондар +2
ArticleMetal and Thin Film Mechanics20160 citations
ABI
Tunable defect engineering in TiON thin films by multi-step sputtering processes: from a Schottky diode to resistive switching memory
Teng‐Yu Su, Chi‐Hsin Huang, Yu‐Chuan Shih +5
ArticleAdvanced Memory and Neural ComputingJournal of Materials Chemistry C20170 citations
ABI
Electrochemical study on the corrosion behavior of Ti3SiC2 in 3.5% NaCl solution
Ming Zhu, Rui Wang, Chen Chen +2
ArticleMXene and MAX Phase MaterialsRSC Advances20170 citations
ABI
Effect of Surface Symmetry on the Dissociative Adsorption of Water on Gallium Oxynitride
G. R. Berdiyorov, Ahsanulhaq Qurashi, G. Eshonqulov +1
ArticleSemiconductor materials and devicesThe Journal of Physical Chemistry C20170 citations
ABI
Atomic Layer Deposition of Ultra-Thin Oxide Semiconductors: Challenges and Opportunities
Serge Zhuiykov, Zhenyin Hai, Eugene Kats +2
ArticleSemiconductor materials and devicesKey engineering materials20170 citations
ABI
Computer Engineers' Challenges for the Next Decade: The Triangle of Power Density, Circuit Degradation, and Reliability
Jörg Henkel, Paolo Montuschi
ArticleAdvancements in Semiconductor Devices and Circuit DesignComputer20170 citations
ABI
Transient capacitance spectroscopy of silicon MIS-structures with an impurity of vanadium
Kh.S. Daliev
ArticleSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20170 citations
ABI
Effect of Electron Irradiation on Electrical and Electroluminescent Properties of n+p 4H-SiC Structures
Anatoly M. Strel’chuk, A. E. Kalyadin, A. А. Lebedev +3
ArticleSemiconductor materials and devicesMaterials science forum20180 citations
ABI
MODIFICATION OF YSZ PROPERTIES BY HIGH ENERGY IONS OF ARGON AND OXYGEN
I. V. Khromushin, T.I. Aksenova, Yu. V. Ermolaev +1
ArticleAdvancements in Solid Oxide Fuel CellsNNC RK Bulletin20180 citations
ABI
Effect of Ion Refocusing and Focusing at the Ne and Ar Small Angle Ion Bombardment on the Surface III-V Compound Semiconductors
Karimov Muxtor Karimberganovich, Sadullaev Shuxrat Ravshanovich, Sobirov Ravshanbek Yuldashbaevich
ArticleIon-surface interactions and analysisInternational Journal of Trend in Scientific Research and Development20180 citations
ABI
First-principles study of the effect of dopants (Pd, Ni) on the formation and desorption of T2O from a Li2TiO3 (001) surface
Yiyu Fang, Xianggang Kong, You Yu +5
ArticleSemiconductor materials and devicesRSC Advances20190 citations
ABI
Electrostatically gated nanofluidic membrane for ultra-low power controlled drug delivery
Nicola Di Trani, Antonia Silvestri, Antons Sizovs +5
ArticleNanopore and Nanochannel Transport StudiesLab on a Chip20200 citations
ABI
Collaboration between a Pt-dimer and neighboring Co–Pd atoms triggers efficient pathways for oxygen reduction reaction
Haolin Li, Sheng Dai, Dinesh Bhalothia +3
ArticleElectrocatalysts for Energy ConversionPhysical Chemistry Chemical Physics20200 citations
ABI
Area-selective Ru ALD by amorphous carbon modification using H plasma: from atomistic modeling to full wafer process integration
Ivan Zyulkov, Е. Н. Воронина, Mikhail Krishtab +6
ArticleSemiconductor materials and devicesMaterials Advances20200 citations
ABI
Modification of a H-terminated silicon surface by organic sulfide molecules: the mechanism and origin of reactivity
Na Yang, Weiyi Li, Liang Dong
ArticleMolecular Junctions and NanostructuresNew Journal of Chemistry20200 citations
ABI
Positive temperature dynamics of near-band-edge photoluminescence in Nb-doped SrTiO3
Vadim Sh. Yalishev, R. A. Ganeev, Ali S. Alnaser +1
ArticleElectronic and Structural Properties of OxidesPhysica B Condensed Matter20200 citations
ABI
The amplitude of RTN in nanometer SOI FinFET with different channel shape
Ahmed Yusupov, A. É. Atamuratov, Azamat E. Abdikarimov +2
ArticleAdvancements in Semiconductor Devices and Circuit DesignDevelopments of Artificial Intelligence Technologies in Computation and Robotics20200 citations
ABI
Ab initio investigation of ultrasmall silicon nanocrystal doping by phosphorous
Shermakhmat Makhkamov, F. T. Umarova, A. B. Normurodov +3
ArticleSilicon Nanostructures and PhotoluminescenceInternational Journal of Modern Physics B20200 citations
ABI
Investigation of the applicability of post-irradiation annealing to reduce the degree of disorder in AlN ceramic to proton irradiation
Аrtem L. Kozlovskiy
ArticleAdvanced ceramic materials synthesisEurasian journal of physics and functional materials20200 citations
ABI
INFLUENCE OF DEFECTS FORMATION WAY ON PROPERTIES OF PROTON CONDUCTORS BASED ON LANTHANUM SCANDATE
I. V. Khromushin, T.I. Aksenova
ArticleAdvancements in Solid Oxide Fuel CellsNNC RK Bulletin20200 citations
ABI
Triggering the phase transition and capacity enhancement of Nb2O5 for fast-charging lithium-ion storage
Fei Shen, Zhongti Sun, Liang Zhao +9
ArticleAdvancements in Battery MaterialsJournal of Materials Chemistry A20210 citations
ABI
Effect of vacancy defects on the electronic transport properties of an Ag–ZnO–Pt sandwich structure
G. R. Berdiyorov, F. Boltayev, G. Eshonqulov +1
ArticleZnO doping and propertiesJournal of Computational Electronics20210 citations
ABI
α–β Phase Transition in the Impurity Phase of a SiO2 Single Crystal
M. U. Kalanov, A. V. Khugaev
ArticleSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters20210 citations
ABI
Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape
A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +2
ArticleAdvancements in Semiconductor Devices and Circuit Designe-Journal of Surface Science and Nanotechnology20210 citations
ABI
Energy and Temperature Dependence of the Secondary Ion Emission of GaN/SiC Clusters under Cesium-Ion Bombardment
Б.Г. Атабаев, R. Djabbarganov, M. Kh. Akhmadjanova +1
ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20210 citations
ABI

Semiconductor materials and devices

Corrosion resistance and antifriction properties of nitride multilayered coatings on the basis of V and Ta

Tunable defect engineering in TiON thin films by multi-step sputtering processes: from a Schottky diode to resistive switching memory

Electrochemical study on the corrosion behavior of Ti<sub>3</sub>SiC<sub>2</sub> in 3.5% NaCl solution

Effect of Surface Symmetry on the Dissociative Adsorption of Water on Gallium Oxynitride

Atomic Layer Deposition of Ultra-Thin Oxide Semiconductors: Challenges and Opportunities

Computer Engineers' Challenges for the Next Decade: The Triangle of Power Density, Circuit Degradation, and Reliability

Transient capacitance spectroscopy of silicon MIS-structures with an impurity of vanadium

Effect of Electron Irradiation on Electrical and Electroluminescent Properties of n<sup>+</sup>p 4H-SiC Structures

MODIFICATION OF YSZ PROPERTIES BY HIGH ENERGY IONS OF ARGON AND OXYGEN

Effect of Ion Refocusing and Focusing at the Ne and Ar Small Angle Ion Bombardment on the Surface III-V Compound Semiconductors

First-principles study of the effect of dopants (Pd, Ni) on the formation and desorption of T<sub>2</sub>O from a Li<sub>2</sub>TiO<sub>3</sub> (001) surface

Electrostatically gated nanofluidic membrane for ultra-low power controlled drug delivery

Collaboration between a Pt-dimer and neighboring Co–Pd atoms triggers efficient pathways for oxygen reduction reaction

Area-selective Ru ALD by amorphous carbon modification using H plasma: from atomistic modeling to full wafer process integration

Modification of a H-terminated silicon surface by organic sulfide molecules: the mechanism and origin of reactivity

Positive temperature dynamics of near-band-edge photoluminescence in Nb-doped SrTiO3

The amplitude of RTN in nanometer SOI FinFET with different channel shape

<i>Ab initio</i> investigation of ultrasmall silicon nanocrystal doping by phosphorous

Investigation of the applicability of post-irradiation annealing to reduce the degree of disorder in AlN ceramic to proton irradiation

INFLUENCE OF DEFECTS FORMATION WAY ON PROPERTIES OF PROTON CONDUCTORS BASED ON LANTHANUM SCANDATE

Triggering the phase transition and capacity enhancement of Nb<sub>2</sub>O<sub>5</sub> for fast-charging lithium-ion storage

Effect of vacancy defects on the electronic transport properties of an Ag–ZnO–Pt sandwich structure

α–β Phase Transition in the Impurity Phase of a SiO2 Single Crystal

Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape

Energy and Temperature Dependence of the Secondary Ion Emission of GaN/SiC Clusters under Cesium-Ion Bombardment