Skip to main content
AkademIndex

Products

For developers

AkademBaseOpen API for the ecosystem

Semiconductor materials and devices

277 works

  1. Composition and Morphology of A Si(111) Surface with a SiO2 Surface Film of Different Thicknesses

    Б. Е. Умирзаков, S. B. Donaev, R. M. Yorkulov +2

    ArticleSilicon Nanostructures and PhotoluminescenceSemiconductors20220 citations
    ABI

  2. Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs

    Zamira Atamuratova, Ahmed Yusupov, Jean Chamberlain Chedjou +1

    ArticleSemiconductor materials and devicese-Journal of Surface Science and Nanotechnology20220 citations
    ABI

  3. INVESTIGATION OF SILICON SOLAR CELLS USING THE EDIBON SCADA SYSTEM

    M. Nosirov, Jahongir Norboyevich Ziyoitdinov, Abduhalil Eraliev +2

    ArticleSemiconductor materials and devicesЭкономика и социум20220 citations
    ABI

  4. Capacitance-Voltage Method for Detecting the local oxide trapped charge in SOI FinFET

    A.E. Abdikarimov, Mirzabahrom Foziljonov, И. Н. Каримов

    ArticleSemiconductor materials and devices20220 citations
    ABI

  5. Effect of CuO doping on the performance of LaB6 interlayer films in Al/CuO:LaB6/p-Si/Al diodes

    R.O. Ocaya, Abdullah G. Al‐Sehemi, A. Tataroğlu +5

    ArticleSemiconductor materials and interfacesPhysica B Condensed Matter20230 citations
    ABI

  6. EFFECT OF QUENCHING AND TEMPERING TEMPERATURES ON THE STRUCTURE FORMATION OF 4XMFC, 4X5MF1C STEELS DURING LOW-TEMPERATURE NITRO-CEMENTATION

    Begatov Mukhammadjonovich, Ergashev Meirzhan Sattar Ugli, Malika Platoshina +58

    ArticleMetal and Thin Film MechanicsInternational Journal of Mechatronics and Applied Mechanics20230 citations
    ABI

  7. Prediction of Defect Formation Process in Lithium Fluoride Using Nonlinear Regression Analysis

    Alisher Kakhramonov, Mukhtorjon Karimov, М. К. Курбанов +3

    ArticleAdvancements in Battery Materials20230 citations
    ABI

  8. Epitaxial Growth of Ge Nanofilms on the Surface of SrF2

    S. T. Abraeva, Д. А. Ташмухамедова, Б. Е. Умирзаков

    ArticleSemiconductor materials and devicesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20230 citations
    ABI

  9. Gate Oxide And Back Oxide Materials Combined Influence On Self-Heating And Dibl Effects In 2d Mos<sub>2</sub> Based Mosfet

    Atabek E. Egamberdievich Atamuratov, Khushnudbek Sharifbaevich Saparov, Ahmed Yusupovich Yusupov +1

    PreprintAdvancements in Semiconductor Devices and Circuit DesignPreprints.org20230 citations
    ABI

  10. Growing of perfect single-crystal epitaxial films of (Si 2 ) 1-x (GaN) x solid solutions on Si (111) substrates from the liquid phase

    D. V. Saparov, А. С. Саидов, Sh. N. Usmonov +3

    PreprintGaN-based semiconductor devices and materialsResearch Square20230 citations
    ABI

  11. Exploring the Advancements in Physical Vapor Deposition Coating: A Review

    Hamza Ichou, Nаdiа Аrrousse, Elyor Berdimurodov +1

    Review articleMetal and Thin Film MechanicsJournal of Bio- and Tribo-Corrosion20230 citations
    ABI

  12. Rational design of two-dimensional BN biphenylene monolayer as an efficient anode material for Ca-ion batteries: A theoretical study

    Khidhair Jasim Mohammed, Abdulrahman T. Ahmed, Mandeep Kaur +6

    ArticleAdvancements in Battery MaterialsJournal of Physics and Chemistry of Solids20240 citations
    ABI

  13. Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +5

    ArticleAdvancements in Semiconductor Devices and Circuit DesignMicro and Nanostructures20240 citations
    ABI

  14. A Novel Four-Level T-Type Reconfigurable Fault-Tolerant Converter for Hybrid-Excitation SRM Performance Enhancement

    Guoping Wang, Hao Chen, Fengyuan Yu +8

    ArticleSemiconductor materials and devicesIEEE Transactions on Transportation Electrification20240 citations
    ABI

  15. Numerical calculation of the probability of an electronic transition in a two-barrier heterostructure by a thin nanolayer

    Paziljon Baymatov, Bakhrom Abdulazizov, Makhmudjon Tokhirjonov

    ArticleSurface and Thin Film PhenomenaThe European Physical Journal B20240 citations
    ABI

  16. SiC plasma characterization produced by 3 ns pulse laser at 10 <sup>10</sup> W/cm <sup>2</sup> intensity

    L. Torrisi, A. Torrisi, M. Cutroneo

    ArticleSilicon Carbide Semiconductor TechnologiesRadiation effects and defects in solids20240 citations
    ABI

  17. Dielectric Properties of Zirconium Carbide (ZrC) in the Terahertz Domain: Challenges with Surface Layers

    Muhammad Farooq Saleem, Ghulam Abbas Ashraf, Muhammad Javid +9

    ArticleSemiconductor materials and devicesJOM20240 citations
    ABI

  18. Effect of Electron Bombardment on the Composition and Structure of CaF2/Si(111) Films

    A. A. Abduvayitov, Д. А. Ташмухамедова, Б. Е. Умирзаков +1

    ArticleSemiconductor materials and devicesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 citations
    ABI

  19. CVC Structure of PtSi - Si&lt;Pt&gt;-M in a Wide Range of Temperatures

    A. T. Mamadalimov, Makhmudkhodja Sh. Isaev, Tokhirjon U. Atamirzaev +2

    ArticleSemiconductor materials and interfacesEast European Journal of Physics20240 citations
    ABI

  20. Determining discrete energetic states in a ligated silicon structure using a mathematical model

    Jahongir Mamadaliev, Muslim Turgunov, Nurmirza Toshmamatov +2

    ArticleSemiconductor materials and interfacesAIP conference proceedings20240 citations
    ABI

  21. Effect of $${\text{O}}_{2}^{ + }$$ Ion Implantation on the Elemental and Chemical Composition of the Si(111) Surface

    G. Kh. Allayarova, Б. Е. Умирзаков, A. K. Tashatov

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 citations
    ABI

  22. The Effect of Atmospheric Oxide Thermodesorption on Negative-Ion Atomic and Cluster Sputtering of Silicon Single Crystal by Cesium Ions

    Б.Г. Атабаев, R. Djabbarganov, A. S. Khalmatov +2

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 citations
    ABI

  23. A new method for growing epitaxial films on foreign substrates − Bent epitaxy

    D. V. Saparov

    ArticleZnO doping and propertiesJournal of Crystal Growth20240 citations
    ABI

  24. Some electrical properties of p-Si–n-(Si2)1-y(GaN)y structures obtained by epitaxy of (Si2)1-y(GaN)y solid solutions on silicon substrates from liquid-phase

    А. С. Саидов, Shukrullo Usmonov, D. V. Saparov +4

    ArticleGaN-based semiconductor devices and materialsAIP conference proceedings20240 citations
    ABI

  25. The effect of atmospheric oxide thermodesorption on negative-ion atomic and cluster sputtering of silicon single crystal by cesium ions

    Б.Г. Атабаев, R. Djabbarganov, A. S. Khalmatov +2

    ArticleIon-surface interactions and analysisПоверхность Рентгеновские синхротронные и нейтронные исследования20240 citations
    ABI