Advanced Semiconductor Detectors and Materials

335 works

Use of the strong exclusion effect in ionizing radiationdetectors based on “pure” semiconductors with non-injecting contacts
D. A. Aronov, B. N. Zaveryukhin, Р. А. Муминов +2
ArticleAdvanced Semiconductor Detectors and Materialsphysica status solidi (a)19860 citations
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Thermoelectric effects in point-contact junctions in the thermal limit
I. F. Itskovich, Michael Moskalets, R. I. Shekhter +1
ArticleThermography and Photoacoustic TechniquesSoviet Journal of Low Temperature Physics19870 citations
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The Influence of Field-Induced Variation in Majority Carrier Lifetime Caused by Photostimulated Heating on Impurity Photoconductivity of Compensated Semiconductors with Exclusion
D. A. Aronov, B. R. Mamatkulov
ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19870 citations
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The ion track etching rate in crystal track detectors
A. Belyaev, Z.S. Bikbova, V. Gayshan +4
ArticleIon-surface interactions and analysisInternational Journal of Radiation Applications and Instrumentation Part D Nuclear Tracks and Radiation Measurements19880 citations
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Radiation defects in Ar+-ion-implanted Hg1?xCdxTe crystals
A. S. Petrov, В. С. Куликаускас, Yu. V. Lilenko +7
ArticleAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal19880 citations
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The influence of diffusion on the carrier exclusion effect in high-purity (intrinsic) semiconductors with non-injecting contacts
D. A. Aronov, B. R. Mamatkulov, R. Mamatkulov
ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19890 citations
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Integral luminescence characteristics of the3He:HgBr2: N2 medium excited by the radiation of a nuclear steady-state, water-moderated, water-cooled (boiling water) reactor
G. A. Batyrbekov, Ш. Х. Гизатулин, S. K. Kunakov +2
ArticleLuminescence Properties of Advanced MaterialsJournal of Applied Spectroscopy19900 citations
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Photoelectric properties of In2O3-CdSiAs2 structures
V. Yu. Rud’, Yu. V. Rud, M. Serginov
ArticleAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal19900 citations
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Distribution of Defects in InAs1-x-ySbxPy-InAs DHs
T. S. Argunova, R. N. Kyutt, B. A. Matveev +3
ArticleAdvanced Semiconductor Detectors and MaterialsDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena19910 citations
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X-Ray Diffractometry and Topography of CdHgTe Bulk Crystals and CdHgTe-CdTe Epitaxial Structures
В. В. Ратников, T. S. Argunova, K.E. Mironov +1
ArticleAdvanced Semiconductor Detectors and MaterialsDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena19910 citations
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Manganese doping of In1?xGaxAsyP1-y films in liquid-phase epitaxy
V. P. Germogenov, O. M. Ivleva, С. В. Пономарев +2
ArticleSemiconductor Quantum Structures and DevicesRussian Physics Journal19920 citations
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Effect of Peierls relief on the low-temperature plasticity of pure CdTe crystals
Vladislav Lirtsman, S. V. Lubenets, В. Д. Нацик +1
ArticleAdvanced Semiconductor Detectors and MaterialsSoviet Journal of Low Temperature Physics19920 citations
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The influence of laser annealing on the surface state of ion doped silicon
I.N. Kodirov, A. K. Tashatov, Б. Е. Умирзаков +1
ArticleLaser Material Processing Techniques19950 citations
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Radiation phenomena in silicon doped with deep level impurities
Marat S. Yunusov
ArticleSilicon and Solar Cell Technologies19950 citations
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Spectroscopy of layers of InAs in GaAs across the transition from layered to three-dimensional growth
Б. Н. Звонков, E. R. Lin’kova, I. G. Malkina +2
ArticleSemiconductor Quantum Structures and DevicesJournal of Experimental and Theoretical Physics Letters19960 citations
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Observation of a negative characteristic temperature for the threshold current of diode lasers for the 2.8 /gmm spectral range
А. А. Попов, V. V. Sherstnev, Yu. P. Yakovlev +2
ArticleAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19970 citations
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TeCd antistructural defects in CdTe crystals
O. A. Matveev, A. I. Terent’ev
ArticleAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19970 citations
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Superluminescence in an AlGaAsSb/InGaAsSb/AlGaAsSb double heterostructure
K. D. Moiseev, M. P. Mikhaĭlova, O. V. Andreichuk +2
ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 citations
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Infrared laser (λ=3.2 μm) based on broken-gap type II heterojunctions with improved temperature characteristics
K. D. Moiseev, M. P. Mikhaiova, O. G. Ershov +1
ArticleAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19970 citations
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New potential applications of scanning electron microscopy to studying InAsSb/InAsSbP lasers
В. А. Соловьев, M. P. Mikhaĭlova, M. V. Stepanov +2
ArticleSpectroscopy and Laser ApplicationsTechnical Physics Letters19970 citations
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Mesa stripe for the 3–3.6 μm range lasers utilizing gadolinium-doped InAsSbP/InGaAsSb double heterostructures
N. V. Zotova, S. A. Karandashev, B. A. Matveev +3
ArticleAdvanced Optical Sensing TechnologiesTechnical Physics Letters19970 citations
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Photoluminescence properties of AlxGa1−xAs epitaxial layers grown under conditions of ultrafast flux cooling
А. В. Абрамов, A. G. Deryagin, N. G. Deryagin +5
ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 citations
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Three-dimensional lattice of parallel-oriented tellurium nanoclusters in an opal matrix
V. N. Bogomolov, L. M. Sorokin
ArticleMineralogy and Gemology StudiesTechnical Physics Letters19970 citations
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Properties of the electron channel in single GaInAsSb/p-InAs heterostructures
T. I. Voronina, T. S. Lagunov, M. P. Mikhaĭlova +4
ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 citations
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The influence of gamma-radiation on DLTS spectra in silicon doped by selenium
N.A. Sultanov, M. Tadzhibaev, E.T. Rakhimov
ArticleSilicon and Solar Cell Technologies19970 citations
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