Advanced Semiconductor Detectors and Materials

335 works

1. The effective mass of electrons in (InSb)_x·(InTe)_1−x crystals

   I. P. Molodyan, D. N. Nasledov, С. И. Радауцан +1

   ArticleSolid-state spectroscopy and crystallographyphysica status solidi (b)19660 citations

   ABIABI:AkademIndex/openalex/1966.article.000001

2. Investigation of n-CdSp-CdTe Thin Film Heterojunctions

   E. I. Adieovich, Yu. M. Yuabov, G. R. Yagudaev

   ArticleAdvanced Semiconductor Detectors and Materialsphysica status solidi (a)19710 citations

   ABIABI:AkademIndex/openalex/1971.article.000009

3. Peculiarity of oxygen radiative chemisorption on sulfides with different forbidden band width

   T.A. Bigeliene, R. U. Kalamazov, R. Kokkozov +1

   ArticleLuminescence Properties of Advanced Materials19750 citations

   ABIABI:AkademIndex/openalex/1975.article.000108

4. Study of plasma parameters in He--Se gas discharge

   N.N. Christov, P. M. Pramatarov, Nikola V. Sabotinov

   ArticleLaser Design and Applications19750 citations

   ABIABI:AkademIndex/openalex/1975.article.000143

5. Study on radiative defects ind by reactor irradiation in Te semiconductor compounds

   Yunusov, П. П. Серегин, A. Kamolov

   ArticleAdvanced Semiconductor Detectors and Materials19760 citations

   ABIABI:AkademIndex/openalex/1976.article.000110

6. EPR spectrum at tellurium vacancies in Pb1−<i>x</i>Sn<i>x</i>Te solid solutions

   Yu. A. Bratashevskii, V. D. Prozorovskiı̆, Yu. S. Kharionovskii

   ArticleSolid-state spectroscopy and crystallographySoviet Journal of Low Temperature Physics19770 citations

   ABIABI:AkademIndex/openalex/1977.article.000119

7. Diamagnetic resonance in Pb1–<i>x</i>Sn<i>x</i>Te

   Yu. A. Bratashevskii, V. D. Prozorovskiı̆, Yu. S. Khaionovskii

   ArticleSolid-state spectroscopy and crystallographySoviet Journal of Low Temperature Physics19770 citations

   ABIABI:AkademIndex/openalex/1977.article.000142

8. Magnetic properties and energy-spectrum parameters of Cd1-<i>x</i>Mg<i>x</i> alloys

   J. W. McClure, I. V. Svechkarev, G. E. Grechnev

   ArticleSemiconductor Quantum Structures and DevicesSoviet Journal of Low Temperature Physics19780 citations

   ABIABI:AkademIndex/openalex/1978.article.000074

9. Charge carrier drift velocity in a finite bismuth single crystal

   Yu. A. Bogod

   ArticleTerahertz technology and applicationsSoviet Journal of Low Temperature Physics19780 citations

   ABIABI:AkademIndex/openalex/1978.article.000133

10. Optical properties of bulk gadolinium in the range 0.5–3.1 eV

    V. P. Gnezdilov, N.M. Zvyagina, G.S. Nikol'skii +2

    ArticleAdvanced Semiconductor Detectors and MaterialsSoviet Journal of Low Temperature Physics19780 citations

    ABIABI:AkademIndex/openalex/1978.article.000152

11. Energy spectrum of basic electrons in Pb1–<i>x</i>Sn<i>x</i>Te in the vicinity of the magnetic phase transition

    Yu. A. Bratashevskii, V. D. Prozorovskiı̆, Yu. S. Kharionovskii

    ArticleAdvanced Semiconductor Detectors and MaterialsSoviet Journal of Low Temperature Physics19790 citations

    ABIABI:AkademIndex/openalex/1979.article.000147

12. Magnetic susceptibility of the ω-phase of Cd–Hg alloys

    Yu. P. Sereda, I. V. Svechkarev

    ArticleAdvanced Semiconductor Detectors and MaterialsSoviet Journal of Low Temperature Physics19790 citations

    ABIABI:AkademIndex/openalex/1979.article.000150

13. Doping of solid solutions in liquid epitaxy. III. Tellurium in AlxGa1?xSb

    A. A. Vilisov, V. P. Germogenov, N. K. Маksimova +1

    ArticleSemiconductor materials and interfacesRussian Physics Journal19800 citations

    ABIABI:AkademIndex/openalex/1980.article.000106

14. Drag of carriers by photons in narrow-gap semiconductors

    В. В. Антонов, А. В. Войцеховский, A. V. Kozyrev

    ArticleAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal19800 citations

    ABIABI:AkademIndex/openalex/1980.article.000107

15. Investigation of photoelectric and recombination characteristics of a CdHgTe optical mixer

    Yu. V. Lilenko

    ArticleAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal19800 citations

    ABIABI:AkademIndex/openalex/1980.article.000110

16. Investigation of anisotropic effects in vapor epitaxy of indium arsenide. I. Anistropy of growth rate and surface microrelief

    Г. А. Александрова, И. В. Ивонин, L. M. Krasil'nikova +3

    ArticleAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal19800 citations

    ABIABI:AkademIndex/openalex/1980.article.000113

17. Ion doping of gallium arsenide

    П. В. Павлов, E. I. Zorin, D. I. Tetelbaum

    ArticlePhase-change materials and chalcogenidesRussian Physics Journal19800 citations

    ABIABI:AkademIndex/openalex/1980.article.000147

18. NEUTRON, X-RAY AND LATTICE DYNAMICAL STUDIES OF Sb₂ S₃

    K. R. Rao, V. M. Padmanabhan, Neutron Physics Division +2

    ArticleChalcogenide Semiconductor Thin FilmsLe Journal de Physique Colloques19810 citations

    ABIABI:AkademIndex/openalex/1981.article.000100

19. Investigation of the electrical and photoelectric properties of manganese-doped gallium arsenide as a material for photoresistive detectors

    В. В. Антонов, А. В. Войцеховский, M. A. Krivov +6

    ArticleAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal19810 citations

    ABIABI:AkademIndex/openalex/1981.article.000112

20. Behavior of excess currents in n-type gallium arsenide tunnel diodes

    A. P. Vyatkin, V. A. Glushchenko, R. P. Parkhomenko +1

    ArticleAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal19810 citations

    ABIABI:AkademIndex/openalex/1981.article.000120

21. Changes in the low temperature lattice dynamics of a layered crystal of lead iodide upon intercalation with organic molecules

    A. M. Gurevich, B. Ya. Sukharevskiǐ, A. V. Alapina

    ArticleLuminescence Properties of Advanced MaterialsSoviet Journal of Low Temperature Physics19820 citations

    ABIABI:AkademIndex/openalex/1982.article.000139

22. On the possibility of a flare-up of discrete exciton absorption structure in n-CdxHg1−xTe crystals in a magnetic field

    V. I. Ivanov-Omskiĭ, S. I. Kokhanovskiǐ, R. P. Seysyan +4

    ArticleSemiconductor Quantum Structures and DevicesSolid State Communications19830 citations

    ABIABI:AkademIndex/openalex/1983.article.000026

23. On the Minimum Coefficient of Light Absorption by Free Carriers under the Conditions of Exclusion in “Pure” Semiconductors with Non-Injecting Contacts

    D. A. Aronov, V. V. Rubinov

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19830 citations

    ABIABI:AkademIndex/openalex/1983.article.000082

24. Physical properties of Zn /SUB x/ Cd /SUB 1-x/ S films obtained by chemical deposition from the vapor phase in a hydrogen flux

    T. M. Razykov

    ArticleChalcogenide Semiconductor Thin FilmsOSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)19840 citations

    ABIABI:AkademIndex/openalex/1984.article.000118

25. Distinctive features of the fabrication and the characteristics of coaxial Si(Li) nuclear radiation detectors

    N.P. Afanas'eva, L.I. Pashuk, A.K. Pustovoit

    ArticleParticle Detector Development and PerformanceInstruments and Experimental Techniques19850 citations

    ABIABI:AkademIndex/openalex/1985.article.000113