Advanced Semiconductor Detectors and Materials

335 works

1. Determination of the resistance of external parameters to the degradation of the parameters of silicon photocells with input nickel atoms

   Elyor Bakhriddinovich Saitov

   ArticleSilicon Nanostructures and PhotoluminescencePhysical Sciences and Technology20221 citations

   ABIABI:AkademIndex/openalex/2026.other.384839

2. Growth and photosensitivity of pSi-n(GaSb)1 − x (Si2) x structures

   А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +2

   ArticleSemiconductor materials and interfacesApplied Solar Energy20071 citations

   ABIABI:AkademIndex/openalex/2026.other.386196

3. Growth and photoelectric properties of graded-gap Si-(Si2)1−x(GaP)x heterostructures

   Б. Сапаев, А. С. Саидов, S. Dadamukhamedov

   ArticleSemiconductor Quantum Structures and DevicesTechnical Physics20041 citations

   ABIABI:AkademIndex/openalex/2026.other.386215

4. SERIAL RESISTANCE OF PHOTOCONVERTERS SNO2/PCDTE, ITO/PCDTE И IN2O3/PCDTE BASED ON CADMIUM TELLURIDE

   Sharifa B. Utamuradova, S. A. Muzafarova

   ArticleAdvanced Semiconductor Detectors and MaterialsEurasianUnionofScientists20221 citations

   ABIABI:AkademIndex/openalex/2026.other.392901

5. Surface state density at the semiconductor-glass interface

   Aslan Nasirov

   ArticleSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20081 citations

   ABIABI:AkademIndex/openalex/2026.other.419525

6. Neutron Activation Analysis of Manganese Mercury Telluride

   I. I. Sadykov, В. Г. Зиновьев, Z. O. Sadykova

   ArticleNuclear Physics and ApplicationsJournal of Analytical Chemistry20051 citations

   ABIABI:AkademIndex/openalex/2026.other.425517

7. Technology of fabrication of CdS_xTe_1-x solid solution on silicon substrate

   I.B. Sapaev, S. Sadullaev, D. Babajanov +5

   ArticleAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences20231 citations

   ABIABI:AkademIndex/openalex/2026.other.432351

8. Volt-Ampere Characteristics of Hetero Film Photosensitive Structure Au-CdS-nSi-CdTe-Au

   Sharifa B. Utamuradova, Kh.S. Daliev, Shakhrukh Kh. Daliev +3

   ArticleChalcogenide Semiconductor Thin FilmsEast European Journal of Physics20241 citations

   ABIABI:AkademIndex/openalex/2026.other.467178

9. Fabrication and crystallophysical properties of (ZnSe)x(CdTe)1−x (x = 0−1) multicomponent system films

   T.M. Razykov

   ArticleChalcogenide Semiconductor Thin FilmsThin Solid Films19881 citations

   ABIABI:AkademIndex/openalex/2026.other.486323

10. Peculiarities of solar elements based on narrow-band-gap semiconductors

    М. С. Саидов

    ArticleChalcogenide Semiconductor Thin FilmsApplied Solar Energy20111 citations

    ABIABI:AkademIndex/openalex/2026.other.500407

11. Extrinsic thermal voltaic effect in photothermal elements

    М. С. Саидов

    ArticleThermography and Photoacoustic TechniquesApplied Solar Energy20121 citations

    ABIABI:AkademIndex/openalex/2026.other.506219

12. Research of the morphological and structural properties of CdTe films obtained by chemical molecular beam deposition for thin film solar cells

    К. M. Kuchkarov, T.M. Razykov, Chris Ferekides +3

    ArticleChalcogenide Semiconductor Thin FilmsApplied Solar Energy20151 citations

    ABIABI:AkademIndex/openalex/2026.other.535701

13. Current sensitivity and efficiency of a CdO-pCdTe-Mo structure at low light levels

    Ш. А. Мирсагатов, O. K. Ataboev, M. A. Makhmudov

    ArticleChalcogenide Semiconductor Thin FilmsApplied Solar Energy20111 citations

    ABIABI:AkademIndex/openalex/2026.other.549755

14. Investigation of the surface recombination rate in polycrystalline films from the A⁶B⁶ compound by the MW-PC method

    Nodir Alimov, J. Vaitkus, Sardorbek Otajonov +1

    ArticleAdvanced Semiconductor Detectors and MaterialsJournal of Physics Conference Series20221 citations

    ABIABI:AkademIndex/openalex/2026.other.551349

15. Mechanisms of anomalous photovoltage Effect in CdTe films

    G. A. Nabiev

    ArticleAdvanced Semiconductor Detectors and MaterialsSemiconductors20091 citations

    ABIABI:AkademIndex/openalex/2026.other.552700

16. Electron eigenvalues in quantum well of AlAs/InxGa1−xAs/AlAs heterostructures with InAs nanoinserts

    Paziljon Baymatov, Bakhrom Abdulazizov, Makhmudjon Tokhirjonov

    ArticleSemiconductor Quantum Structures and DevicesThe European Physical Journal B20231 citations

    ABIABI:AkademIndex/openalex/2026.other.559418

17. Formation of interfacial CdTe1−x S x solid solutions in CdTe/CdS heterojunctions

    J. Janabergenov, S. A. Muzafarova

    ArticleQuantum Dots Synthesis And PropertiesInorganic Materials20071 citations

    ABIABI:AkademIndex/openalex/2026.other.561983

18. Determination of ZnSe(Te) stoichiometry and dopant content by X-ray analysis

    N. M. Mukhamedshina, A. A. Mirsagatova, В. Г. Зиновьев

    ArticleChalcogenide Semiconductor Thin FilmsJournal of Radioanalytical and Nuclear Chemistry20051 citations

    ABIABI:AkademIndex/openalex/2026.other.566736

19. On the generation-recombination currents in p-n junctions of semiconductors with continuous gap-state spectrum

    A. Yu. Leĭderman

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19851 citations

    ABIABI:AkademIndex/openalex/2026.other.568655

20. FEATURE OF TECHNOLOGY FOR OBTAINING BY THERMOVACUUM EVAPORATION METHOD OF FILM n-CdS / p-CdTe HETEROSTRUCTURES WITH PHOTOVOLTAIC AND PHOTORESISTIVE PROPERTIES

    Olmosbek Mamatov, N. Kh. Yuldashev

    ArticleChalcogenide Semiconductor Thin FilmsEuropean Science Review20211 citations

    ABIABI:AkademIndex/openalex/2026.other.580980

21. Short-circuit current spectra of photovoltaic CdTe and CdTe:In films

    M. A. Karimov, N. Kh. Yuldashev

    ArticleAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal20071 citations

    ABIABI:AkademIndex/openalex/2026.other.580982

22. To the Theory of Dimensional Quantization in Narrow-Gap Crystals

    Sharifa B. Utamuradova, Rustam Yavkachovich Rasulov, Voxob Rustamovich Rasulov +2

    ArticleSemiconductor Quantum Structures and DevicesEast European Journal of Physics20231 citations

    ABIABI:AkademIndex/openalex/2026.other.590375

23. Quantum-Dimensional Near-Surface Recombination of Photocarriers in CdTe Microcrystals

    А. В. Селькин, N. Kh. Yuldashev

    ArticleQuantum Dots Synthesis And PropertiesBulletin of the Russian Academy of Sciences Physics20231 citations

    ABIABI:AkademIndex/openalex/2026.other.591866

24. Energy levels and heat generation of electron-hole pairs in Ge, GaSb, and InAs doped by some compounds of the II–V and II–VI types

    М. С. Саидов

    ArticleSemiconductor Quantum Structures and DevicesApplied Solar Energy20101 citations

    ABIABI:AkademIndex/openalex/2026.other.610691

25. The Field and Spectrum Dependences of Impurity Photoconductivity with Exclusion in Compensated Semiconductors

    D. A. Aronov, B. R. Mamatkulov

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19861 citations

    ABIABI:AkademIndex/openalex/2026.other.658872