Ion-surface interactions and analysis

446 works

Computer simulation of scattering Xe+ ions from InP(001)❬110❭ surface at grazing incidence
Hidoyat Egamberganovich Abdikarimov, Elyor Baxtiyorovich Rajabov, Gulyor Shavkatovna Turayeva
ArticleIon-surface interactions and analysisDOAJ (DOAJ: Directory of Open Access Journals)20210 citations
ABI
Experimental and theoretical study of the effect of bombardment with Ar+ ions on the spectrum of valence electrons of a Si (111) single crystal
Y. S. Ergashov, Б. Е. Умирзаков, N. A. Nurmatov +1
ArticleSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences20210 citations
ABI
Single-walled carbon nanotube structure and radiation defects under the high energy electron beam
I.I. Yuldashova, M. Yu. Tashmetov
ArticleCarbon Nanotubes in Composites«Узбекский физический журнал»20210 citations
ABI
Study of the iron distribution profile and the influence of annealing on the structure implanted in silicon
Б. Э. Эгамбердиев, A. S. Mallayev, Sh. A. Sayfulloev +1
ArticleSilicon and Solar Cell TechnologiesAIP conference proceedings20210 citations
ABI
Efficiency of Injecting Radiation Defects during Irradiation of Silicon n+–p Structures with Fast Electrons
M. Yu. Tashmetov, Sh. Makhkamov, А. R. Sattiev +2
ArticleSilicon and Solar Cell TechnologiesApplied Solar Energy20210 citations
ABI
"Growth of Li-B nanocrystals on the Surface of LiF Laser Crystal at 60Co Gamma-Irradiation"
Э. М. Ибрагимова
ArticleIon-surface interactions and analysisJuniper Online Journal Material Science20210 citations
ABI
Investigation of stepped InP(001)<110> surface by the method of low energy ion scattering
М. K. Kаrimov, Uchkun Kutliev, M. U. Otabaev +1
ArticleIon-surface interactions and analysisJournal of Physics Conference Series20220 citations
ABI
Investigation of the Operation Speed of Surface-Ionization Detectors
Azim Sh. Radjabov, S. S. Iskhakova, Dilshadbek T. Usmanov
ArticleMass Spectrometry Techniques and ApplicationsTechnical Physics20220 citations
ABI
Composition and Morphology of A Si(111) Surface with a SiO2 Surface Film of Different Thicknesses
Б. Е. Умирзаков, S. B. Donaev, R. M. Yorkulov +2
ArticleSilicon Nanostructures and PhotoluminescenceSemiconductors20220 citations
ABI
Investigation of the stability and charge states of vacancy in clusters Si29 and Si38
A. B. Normurodov, A. P. Mukhtarov, F. T. Umarova +3
ArticleSilicon Nanostructures and PhotoluminescenceCondensed Matter Physics20220 citations
ABI
W Ions Energy Spectra Formed by Sharp and Grazing Laser Radiation
A. Matnazarov, R. Artikova
ArticleLaser-induced spectroscopy and plasmaBulletin of Science and Practice20220 citations
ABI
DISPOSAL OF SPENT IONIZATION RADIATION SOURCES COBALT-60
U. T. Ashrapov, B. B. Mirzaev, V. Nesterov
ArticlePulsed Power Technology ApplicationsZenodo (CERN European Organization for Nuclear Research)20220 citations
ABI
DEEP LEVEL TRANSIENT SPECTROSCOPY OF DEFECTS IN SILICON MULTILAYER STRUCTURES DOPED WITH HAFNIUM ATOMS
Shakhrukh Kh. Daliev, Javokhir A. Ergashev
ArticleSilicon Nanostructures and PhotoluminescenceEuropean Science Review20220 citations
ABI
Infuence of Ba atov adsorption and implanation of Ba-=SUP=-+-=/SUP=- ions on the electronic structure of single crystalline Ge
Д. А. Ташмухамедова, Б. Е. Умирзаков, Y. S. Ergashov +2
ArticleIon-surface interactions and analysisЖурнал технической физики20220 citations
ABI
Computer simulation of ice film sputtering from Au(111) surface
Uchkun Kutliev, Kamola Otabaeva, Mukhtorjon Karimov +1
ArticleIon-surface interactions and analysisJournal of Physics Conference Series20220 citations
ABI
Study of the critical angle of channeling of active metal ions through thin aluminum films
З. А. Исаханов, Б. Е. Умирзаков, S. S. Nasriddinov +2
ArticleIon-surface interactions and analysisПисьма в журнал технической физики20220 citations
ABI
A Program for Calculating the Projective Range and Straggling of Ions in a Solidusing the Approximation of V.V. Yudin
Sharifa B. Utamuradova, Р. А. Муминов, В. Г. Дыскин +1
ArticleAerospace, Electronics, Mathematical ModelingComputational nanotechnology20220 citations
ABI
Composition and electronic structure of hidden nanoscale phases and layers of BaSi-=SUB=-2-=/SUB=- formed in the near-surface of Si
Б. Е. Умирзаков, M.T. Normuradov, D. A. Normurodov +1
ArticleSemiconductor materials and interfacesФизика и техника полупроводников20220 citations
ABI
Ion sputtering as methods for generation of cluster particles
Ш. Т. Хожиев, С. Е. Максимов, Ш.К. Кучканов +4
ArticleIon-surface interactions and analysisE3S Web of Conferences20230 citations
ABI
Temperature Dependences of the Sputtering of Negative Silicon Cluster Ions
Б.Г. Атабаев, R. Dzabbarganov, F. R. Yuzikaeva +3
ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20230 citations
ABI
Peculiarities of Photoelectron Spectra of Ge Implanted with Na-=SUP=-+-=/SUP=- Ions
S. T. Abraeva, Д. А. Ташмухамедова, M. B. Yusupjanova +1
ArticleIon-surface interactions and analysisПисьма в журнал технической физики20230 citations
ABI
Surface ionization of CsCl molecules in the learning process
Rakhmatulla Abdullaev, Mavlyuda Zakhidova, Aygul Urazimbetova +3
ArticleDiamond and Carbon-based Materials ResearchE3S Web of Conferences20230 citations
ABI
Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon
S. B. Donaev, Ganjimurod Shirinov, Surayyo Ergasheva +3
ArticleSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences20230 citations
ABI
On the Band-Gap Width of NiSi2 Nanocrystals Created in the Surface Region of Si Using Ion Implantation
N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков
ArticleSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20230 citations
ABI
Impact of bombardment by Ar+, Na+ and O2+ ions on spectra of elastically scattered electrons of single-crystal Ge
S. T. Abraeva, Д. А. Ташмухамедова, Soadat Gulyamova +2
ArticleSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences20230 citations
ABI

Ion-surface interactions and analysis

Computer simulation of scattering Xe+ ions from InP(001)❬110❭ surface at grazing incidence

Experimental and theoretical study of the effect of bombardment with Ar<sup>+</sup> ions on the spectrum of valence electrons of a Si (111) single crystal

Single-walled carbon nanotube structure and radiation defects under the high energy electron beam

Study of the iron distribution profile and the influence of annealing on the structure implanted in silicon

Efficiency of Injecting Radiation Defects during Irradiation of Silicon n+–p Structures with Fast Electrons

"Growth of Li-B nanocrystals on the Surface of LiF Laser Crystal at 60Co Gamma-Irradiation"

Investigation of stepped InP(001)<110> surface by the method of low energy ion scattering

Investigation of the Operation Speed of Surface-Ionization Detectors

Composition and Morphology of A Si(111) Surface with a SiO2 Surface Film of Different Thicknesses

Investigation of the stability and charge states of vacancy in clusters Si29 and Si38

W Ions Energy Spectra Formed by Sharp and Grazing Laser Radiation

DISPOSAL OF SPENT IONIZATION RADIATION SOURCES COBALT-60

DEEP LEVEL TRANSIENT SPECTROSCOPY OF DEFECTS IN SILICON MULTILAYER STRUCTURES DOPED WITH HAFNIUM ATOMS

Infuence of Ba atov adsorption and implanation of Ba-=SUP=-+-=/SUP=- ions on the electronic structure of single crystalline Ge

Computer simulation of ice film sputtering from Au(111) surface

Study of the critical angle of channeling of active metal ions through thin aluminum films

A Program for Calculating the Projective Range and Straggling of Ions in a Solidusing the Approximation of V.V. Yudin

Composition and electronic structure of hidden nanoscale phases and layers of BaSi-=SUB=-2-=/SUB=- formed in the near-surface of Si

Ion sputtering as methods for generation of cluster particles

Temperature Dependences of the Sputtering of Negative Silicon Cluster Ions

Peculiarities of Photoelectron Spectra of Ge Implanted with Na-=SUP=-+-=/SUP=- Ions

Surface ionization of CsCl molecules in the learning process

Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon

On the Band-Gap Width of NiSi2 Nanocrystals Created in the Surface Region of Si Using Ion Implantation

Impact of bombardment by Ar<sup>+</sup>, Na<sup>+</sup> and <i>O</i><sub>2</sub><sup>+</sup> ions on spectra of elastically scattered electrons of single-crystal Ge