Ga2O3 and related materials

72 works

Metal–Insulator Transition Detection of Vanadium Dioxide Thin Films by Visible Light Reflection
Bunyod Allabergenov, Sanghun Yun, Byeongdae Choi
ArticleTransition Metal Oxide NanomaterialsACS Applied Materials & Interfaces20221 citations
ABI
Effect of SiO2 and Post-Annealed Ga2O3 Buffer Layers on Ga2O3 Thin Film Growth and Properties
Noiba U. Botirova, Azamat O. Arslanov, Gofur B. Eshonkulov +4
ArticleGa2O3 and related materialsCrystal Growth & Design20251 citations
ABI
Twin-induced phase transition from β-Ga2O3 to α-Ga2O3 in Ga2O3 thin films
Byeongdae Choi, Bunyod Allabergenov, Hong‐Kun Lyu +1
ArticleGa2O3 and related materialsApplied Physics Express20181 citations
ABI
X-Ray Structural and Photoelectric Properties of SnO2, ZnO, and Zn2SnO4 Metal Oxide Films
Khotamjon J. Mansurov, Akramjon Y. Boboev, Jakhongir A. Urinboyev
ArticleZnO doping and propertiesEast European Journal of Physics20241 citations
ABI
White Light Emission from ZnO/Zn0.9Mg0.1O Heterostructures Grown on Si Substrates
Sh. U. Yuldashev, Р. А. Нусретов, I. V. Khvan +2
ArticleZnO doping and propertiesJapanese Journal of Applied Physics20081 citations
ABI
Cathode luminescence spectral studies of degassing and radiation stability of superconductor Y1Ba2Cu3O7–δ
V. V. Eremenko, I. Ya. Fugol’, V. N. Samovarov +3
ArticlePhysics of Superconductivity and MagnetismSoviet Journal of Low Temperature Physics19880 citations
ABI
Rejoinder to the comment by B. J. Luff and P. D. Townsend on the paper “Cathode luminescence spectral studies of degassing and radiation stability of Y1Ba2Cu3O7–δ” [Fiz. Nizk. Temp. 14, 485 (1988)]
V. V. Eremenko, I. Ya. Fugol’, V. N. Samovarov
ArticleGa2O3 and related materialsSoviet Journal of Low Temperature Physics19900 citations
ABI
Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure
М. В. Максимов, A. V. Sakharov, W. V. Lundin +7
ArticleGaN-based semiconductor devices and materialsTechnical Physics Letters19970 citations
ABI
Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates
W. V. Lundin, A. S. Usikov, B. V. Pushnyĭ +11
ArticleGaN-based semiconductor devices and materialsMaterials science forum19980 citations
ABI
Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties
J. Holst, M. Straßburg, N. N. Ledentsov +13
ArticleGaN-based semiconductor devices and materialsMaterials science forum19980 citations
ABI
Photoluminescence of n-GaN: Influence of chemical treatment of the surface using sulfide solutions
Yu. V. Zhilyaev, M. E. Kompan, E. V. Konenkova +2
ArticleGaN-based semiconductor devices and materialsTechnical Physics Letters19980 citations
ABI
Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures
A. V. Sakharov, W. V. Lundin, V. A. Semenov +4
ArticleGaN-based semiconductor devices and materialsTechnical Physics Letters19990 citations
ABI
Annealing Effect on Passivated Deep Levels in GaN Epilayers
Sh. U. Yuldashev, Tae Won Kang, Woon Hyung Jung +6
ArticleGaN-based semiconductor devices and materialsJapanese Journal of Applied Physics20000 citations
ABI
Electric Characteristics of 6H-SiC/GaN Isotype n-n Heterojunctions
N.I. Kuznetsov, A. E. Nikolaev, Yu. Melnik +1
ArticleGaN-based semiconductor devices and materialsMaterials science forum20000 citations
ABI
GaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon Substrates
Michael E. Mastro, O. Kryliouk, Todd Dann +4
ArticleGaN-based semiconductor devices and materialsMaterials science forum20020 citations
ABI
Influence of ion and laser treatment on composition, structure and properties of epitaxy GaF 2 films
Д. А. Ташмухамедова
ArticleInorganic Fluorides and Related Compounds20040 citations
ABI
Luminescence of ZnO nanocrystals capped with an organic dye
S. S. Kurbanov, Г. Н. Панин, T.W. Kim +1
ArticleZnO doping and propertiesOptics Communications20070 citations
ABI
Photovoltaic device on a single ZnO nanowire p–n homojunction
Hak Dong Cho, Anvar Zakirov, Sh. U. Yuldashev +3
ArticleZnO doping and propertiesNanotechnology20120 citations
ABI
Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors
Casey M. Schwarz, Anupama Yadav, M. Shatkhin +10
ArticleGaN-based semiconductor devices and materialsApplied Physics Letters20130 citations
ABI
Photoluminescence from porous textured ZnO films grown by chemical bath deposition
S. S. Kurbanov, H. C. Jeon, Z. Sh. Shaymardanov +2
ArticleZnO doping and propertiesJournal of Luminescence20150 citations
ABI
Effective control over near band-edge emission in ZnO/CuO multilayered films
Bunyod Allabergenov, Ulugbek Shaislamov, Hyunseok Shim +3
ArticleZnO doping and propertiesOptical Materials Express20170 citations
ABI
Effect of Surface Symmetry on the Dissociative Adsorption of Water on Gallium Oxynitride
G. R. Berdiyorov, Ahsanulhaq Qurashi, G. Eshonqulov +1
ArticleSemiconductor materials and devicesThe Journal of Physical Chemistry C20170 citations
ABI
Atomic Layer Deposition of Ultra-Thin Oxide Semiconductors: Challenges and Opportunities
Serge Zhuiykov, Zhenyin Hai, Eugene Kats +2
ArticleSemiconductor materials and devicesKey engineering materials20170 citations
ABI
Influence of the Sc cation substituent on the structural properties and energy transfer processes in GAGG:Ce crystals
D. Spassky, Н. С. Козлова, Е. В. Забелина +9
ArticleLuminescence Properties of Advanced MaterialsCrystEngComm20200 citations
ABI
Размерное квантование в n-GaP
B.P. Расулов, Р.Я. Расулов, И.М. Эшболтаев +1
ArticleGaN-based semiconductor devices and materialsФизика и техника полупроводников20200 citations
ABI

Ga2O3 and related materials

Metal–Insulator Transition Detection of Vanadium Dioxide Thin Films by Visible Light Reflection

Effect of SiO<sub>2</sub> and Post-Annealed Ga<sub>2</sub>O<sub>3</sub> Buffer Layers on Ga<sub>2</sub>O<sub>3</sub> Thin Film Growth and Properties

Twin-induced phase transition from β-Ga<sub>2</sub>O<sub>3</sub> to α-Ga<sub>2</sub>O<sub>3</sub> in Ga<sub>2</sub>O<sub>3</sub> thin films

X-Ray Structural and Photoelectric Properties of SnO2, ZnO, and Zn2SnO4 Metal Oxide Films

White Light Emission from ZnO/Zn<sub>0.9</sub>Mg<sub>0.1</sub>O Heterostructures Grown on Si Substrates

Cathode luminescence spectral studies of degassing and radiation stability of superconductor Y1Ba2Cu3O7–<i>δ</i>

Rejoinder to the comment by B. J. Luff and P. D. Townsend on the paper “Cathode luminescence spectral studies of degassing and radiation stability of Y1Ba2Cu3O7–<i>δ</i>” [Fiz. Nizk. Temp. <u>14</u>, 485 (1988)]

Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure

Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates

Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties

Photoluminescence of n-GaN: Influence of chemical treatment of the surface using sulfide solutions

Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures

Annealing Effect on Passivated Deep Levels in GaN Epilayers

Electric Characteristics of 6H-SiC/GaN Isotype n-n Heterojunctions

GaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon Substrates

Influence of ion and laser treatment on composition, structure and properties of epitaxy GaF 2 films

Luminescence of ZnO nanocrystals capped with an organic dye

Photovoltaic device on a single ZnO nanowire p–n homojunction

Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors

Photoluminescence from porous textured ZnO films grown by chemical bath deposition

Effective control over near band-edge emission in ZnO/CuO multilayered films

Effect of Surface Symmetry on the Dissociative Adsorption of Water on Gallium Oxynitride

Atomic Layer Deposition of Ultra-Thin Oxide Semiconductors: Challenges and Opportunities

Influence of the Sc cation substituent on the structural properties and energy transfer processes in GAGG:Ce crystals

Размерное квантование в n-GaP