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Works cited by this work

15 works

Work: The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

  1. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

    Isabelle Ferain, Cynthia A. Colinge, Jean-Pierre Colinge

    Article201111 citations
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  2. Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm

    Sylvain Barraud, Matthieu Berthomé, R. Coquand +7

    Article20126 citations
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  3. Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors

    Antonio J. García‐Loureiro, Natalia Seoane, M. Aldegunde +4

    Article20116 citations
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  4. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    ArticleSemiconductor materials and devicesTechnical Physics Letters20186 citations
    ABI

  5. Quantum corrections in the simulation of decanano MOSFETs

    Asen Asenov, A. R. Brown, J.R. Watling

    Article20034 citations
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  6. Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits

    Ming-Long Fan, Shao‐Yu Yang, Vita Pi‐Ho Hu +3

    Article20144 citations
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  7. RTN distribution comparison for bulk, FDSOI and FinFETs devices

    Louis Gerrer, Salvatore Amoroso, Razaidi Hussin +1

    Article20143 citations
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  8. Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer

    A. É. Atamuratov, Zamira Atamuratova, А. Yusupov +1

    ArticleSemiconductor materials and devicesResults in Physics20183 citations
    ABI

  9. Anomalous Behavior of Lateral C–V Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer

    Zamira Atamuratova, А. Yusupov, B. O. Khalikberdiev +1

    ArticleSemiconductor materials and devicesTechnical Physics20193 citations
    ABI

  10. Double-gate junctionless transistor model including short-channel effects

    Bruna Cardoso Paz, Fernando Avila Herrera, A. Cerdeira +1

    Article20152 citations
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  11. Ultralow-Power Design in Near-Threshold Region

    Dejan Marković, C.C. Wang, Louis P. Alarcón +2

    Article20102 citations
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  12. Random telegraph-signal noise in junctionless transistors

    A. N. Nazarov, Isabelle Ferain, Nima Dehdashti Akhavan +3

    Article20112 citations
    ABI

  13. Performance optimization of nanoscale junctionless transistors through varying device design parameters for ultra-low power logic applications

    Debapriya Basu Roy, Abhijit Biswas

    Article20162 citations
    ABI

  14. Modeling Short-Channel Effects in Asymmetric Junctionless MOSFETs With Underlap

    Nivedita Jaiswal, Abhinav Kranti

    Article20182 citations
    ABI

  15. Untitled

    Other2 citations
    ABI