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Works cited by this work

15 works

Work: The Prospects of Obtaining a New Material with a Hetero-Baric Structure Gexsi1 – x-Si Based on Silicon for Photo Energy Applications

  1. SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY

    Н. Ф. Зикриллаев, S. Koveshnikov, С. Б. Исамов +2

    ArticleSemiconductor materials and interfacesSemiconductors20228 citations
    ABI

  2. Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics

    Н. Ф. Зикриллаев, G. A. Kushiev, Sergey V. Koveshnikov +3

    ArticleSemiconductor materials and interfacesEast European Journal of Physics20238 citations
    ABI

  3. A Surface Study of Si Doped Simultaneously with Ga and Sb

    X.M. Iliyev, Sobir B. Isamov, B. O. Isakov +2

    ArticleSemiconductor Quantum Structures and DevicesEast European Journal of Physics20237 citations
    ABI

  4. The effect of silicon-germanium microheterojunctions on the parameters of silicon solar cells

    Б. А. Абдурахманов, Х. М. Илиев, С. А. Тачилин +2

    ArticleSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20107 citations
    ABI

  5. Photovoltaic Properties of Silicon Doped with Manganese and Germanium

    Н. Ф. Зикриллаев, Habibjon Kushiev, С. Б. Исамов +2

    Article20237 citations
    ABI

  6. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

    Xalmurat M. Iliyev, В. Б. Оджаев, Sobir B. Isamov +5

    ArticleSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20236 citations
    ABI

  7. Magnetic Properties of Silicon Doped with Impurity Atoms of Europium

    Н. Ф. Зикриллаев, G. H. Mavlonov, Levent Trabzon +4

    ArticleMagnetic properties of thin filmsJournal of Nano- and Electronic Physics20235 citations
    ABI

  8. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

    Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

    ArticleSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20235 citations
    ABI

  9. Optical Properties of GexSi1 – x Binary Compounds in Silicon

    Н. Ф. Зикриллаев, Habibjon Kushiev, Shahzodbek I. Hamrokulov +1

    ArticleSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20235 citations
    ABI

  10. Untitled

    Other4 citations
    ABI

  11. The thermoelectric effect in a graded-gap nSi–pSi1–x Ge x heterostructure

    A. Yu. Leĭderman, А. С. Саидов, A. B. Karshiev

    ArticleMaterial Science and ThermodynamicsApplied Solar Energy20164 citations
    ABI

  12. Review and perspective of materials for flexible solar cells

    Xiaoyue Li, Peicheng Li, Zhongbin Wu +3

    Article20202 citations
    ABI

  13. Synergistic Effects of Ge and Si on the Performances and Mechanism of the Ge<sub><i>x</i></sub>Si<sub>1–<i>x</i></sub> Electrodes for Li Ion Batteries

    D. Duveau, Bernard Fraisse, Frédérique Cunin +1

    Article20152 citations
    ABI

  14. Untitled

    Other1 citations
    ABI

  15. Untitled

    Other1 citations
    ABI