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9 works

Work: Features of CoSi2 phase formation by two-stage rapid thermal annealing of Ti/Co/Ti/Si(100) structures

  1. Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms

    S. B. Donaev, A. K. Tashatov, Б. Е. Умирзаков

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201523 citations
    ABI

  2. Composition and properties of nanoscale Si structures formed on the CoSi2/Si(111) surface by Ar+ ion bombardment

    Y. S. Ergashov

    ArticleElectron and X-Ray Spectroscopy TechniquesTechnical Physics201714 citations
    ABI

  3. Structure and Properties of a Bilayer Nanodimensional CoSi2/Si/CoSi2/Si System Obtained by Ion Implantation

    Y. S. Ergashov, Б. Е. Умирзаков

    ArticleIon-surface interactions and analysisTechnical Physics201814 citations
    ABI

  4. Effect of Deposition of Submonolayer Cs Coatings on the Density of Electronic States and Energy Band Parameters of CoSi2/Si(111)

    Б. Е. Умирзаков, I. R. Bekpulatov, I. Kh. Turapov +1

    ArticleSemiconductor materials and interfacesJournal of Nano- and Electronic Physics202213 citations
    ABI

  5. Composition and Structure of a Nanofilm Multilayer System of the SiO2/Si/CoSi2/Si(111) Type Obtained via Ion Implantation

    Y. S. Ergashov, Б. Е. Умирзаков

    ArticleSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20188 citations
    ABI

  6. The Morphology and Electronic Properties of Si Nanoscale Structures on a CaF2 Surface

    Б. Е. Умирзаков, Р. Х. Ашуров, S. B. Donaev

    ArticleSemiconductor materials and interfacesTechnical Physics20194 citations
    ABI

  7. Obtaining and studying the composition, structure and properties of nanophases and nanolayers of CoSi <sub>2</sub>

    Б. Е. Умирзаков, Zh. M. Jumayev, I. R. Bekpulatov +3

    ArticleSemiconductor materials and interfacesMaterials Research Innovations20243 citations
    ABI

  8. Influence of Various Impacts on the Composition and Structure of the Surface of Single-Crystal Si

    Б. Е. Умирзаков, I. R. Bekpulatov, Z. A. Tursunmetova

    ArticleMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20231 citations
    ABI

  9. The Effect of Stepwise Postimplantation Annealing on the Composition and Structure of Silicon Surface Layers Implanted with Alkali Metal Ions

    Б. Е. Умирзаков, З. А. Исаханов, G. Kh. Allaerova +1

    ArticleSemiconductor materials and interfacesTechnical Physics Letters20210 citations
    ABI