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Works citing this work

15 works

Work: Physics of Semiconductor Devices

  1. Mechanism of charge transfer in n-CdS/p-CdTe heterojunctions

    S. A. Muzafarova, Ш. А. Мирсагатов, J. Janabergenov

    ArticleChalcogenide Semiconductor Thin FilmsPhysics of the Solid State200710 citations
    ABI

  2. Ultrasonic annealing of surface states in the heterojunction of a p-Si/n-CdS/n +-CdS injection photodiode

    Ш. А. Мирсагатов, I. B. Sapaev, Zh. T. Nazarov

    ArticleThermography and Photoacoustic TechniquesInorganic Materials20149 citations
    ABI

  3. Temperature effect on the current-voltage characteristics of single-crystalline Si photovoltaic arrays

    Р. А. Муминов, М. Н. Турсунов, О. Ф. Тукфатуллин

    ArticleSilicon and Solar Cell TechnologiesApplied Solar Energy20076 citations
    ABI

  4. Role of the silicon dioxide in formation of higher manganese silicide films

    T. S. Kamilov, A.A. Uzokov, D.K. Kabilov +3

    ArticleAdvanced Thermoelectric Materials and Devices20042 citations
    ABI

  5. The effect of γ radiation on the properties of p-n-p structures based on polycrystalline cadmium telluride

    Zh. Zhanabergenov, Ш. А. Мирсагатов, Smagul Karazhanov +1

    ArticleAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters20032 citations
    ABI

  6. Analysis of the induced photothermal conduction in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions

    T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1

    ArticleSemiconductor materials and interfacesTechnical Physics20132 citations
    ABI

  7. The effect of γ-ray radiation on the characteristics of the interface between silicon and lead-borosilicate glass

    П. Б. Парчинский, С. И. Власов, Aslan Nasirov

    ArticleGlass properties and applicationsSemiconductors20041 citations
    ABI

  8. Photocurrent saturation and negative differential photoconductivity in Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions

    T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1

    ArticleSemiconductor materials and interfacesTechnical Physics20131 citations
    ABI

  9. On the generation of radiation defects by accelerated ions in silicon

    А. В. Иванов, N. B. Strokan

    ArticleSilicon and Solar Cell TechnologiesTechnical Physics Letters19980 citations
    ABI

  10. Electrical properties of p-Si1 − x Ge x Au-Based p-i-n structures and Schottky barriers

    I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

    ArticleSilicon Nanostructures and PhotoluminescenceInorganic Materials20080 citations
    ABI

  11. Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers

    I. G. Atabaev, N. A. Matchanov, M. U. Hajiev +2

    ArticleSemiconductor materials and devicesSemiconductors20100 citations
    ABI

  12. Nanomaterials: Laser‐Based Processing in Gas Phase

    R. A. Ganeev, Rusen Yang, Jung‐Il Hong +4

    OtherLaser-Ablation Synthesis of NanoparticlesNanomaterials20120 citations
    ABI

  13. Cascade Injection Photodetector for the 500−650-nm Spectral Range on the Basis of Solid Solutions of A2B6 Compounds

    Ш. А. Мирсагатов, B. N. Zaveryukhin, O. K. Ataboev +1

    ArticleSemiconductor materials and interfacesUkrainian Journal of Physics20130 citations
    ABI

  14. Effect of Be Co-Doping on Anisotropy of Magnetoresistance in GaMnAs Epitaxial Layers

    P. B. Parchinskiy, A. S. Gazizulina, Aslan Nasirov

    ArticleZnO doping and propertiesRussian Physics Journal20230 citations
    ABI

  15. Self‐Assembled Gallium Sulfide (GaS) Heterostructures Enabling Efficient Water Splitting and Selective Ammonia Sensing

    Danil Bukhvalov, Gianluca D’Olimpio, Tsotne Dadiani +11

    Article2D Materials and ApplicationsAdvanced Functional Materials20250 citations
    ABI