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8 works

Work: Decay of Impurity Clusters of Nickel and Cobalt Atoms in Silicon under the Influence of Pressure

  1. The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

    N. A. Turgunov, Elmurod Kh. Berkinov, R.M. Turmanova

    ArticleSilicon and Solar Cell TechnologiesEast European Journal of Physics20238 citations
    ABI

  2. Calculation of the Total Current Generated in a Tunnel Diode Under the Action of Microwave and Magnetic Fields

    G. Gulyamov, Sharifa B. Utamuradova, Mukhamadjon G. Dadamirzaev +5

    ArticleSemiconductor Quantum Structures and DevicesEast European Journal of Physics20235 citations
    ABI

  3. PROCESSES OF DEFECT FORMATION IN SILICON DIFFUSIONALLY DOPED WITH PLATINUM AND IRRADIATED WITH PROTONS

    Sh.B. Utamuradov, Shakhrukh Kh. Daliev, D.A. Rakhmanov +4

    ArticleSilicon and Solar Cell TechnologiesEurasian Physical Technical Journal20234 citations
    ABI

  4. Study of the Mobility and Electrical Conductivity of Chromium Silicide

    M. Sh. Isaev, Tokhirjon U. Atamirzaev, Mukhammadsodik N. Mamatkulov +2

    ArticleSemiconductor materials and interfacesEast European Journal of Physics20233 citations
    ABI

  5. STUDYING THE INFLUENCE OF PROTON IRRADIATION ON THE DISTRIBUTION PROFILE OF Pt AND Cr IN SURFACE LAYERS n-Si˂Pt˃, n-Si˂Сr˃ USING ELLIPSOMETRIC SPECTROSCOPY

    Sharifa B. Utamuradova

    ArticleAdvanced Materials Characterization TechniquesAdvanced Physical Research20241 citations
    ABI

  6. Investigation of Sensitive Thermal Sensors Based on Si<Pt> and Si<Pd>

    Sharifa B. Utamuradova, Dilmurod A. Rakhmanov, A.S. Abiyev

    ArticleGas Sensing Nanomaterials and SensorsEast European Journal of Physics20241 citations
    ABI

  7. INFLUENCE OF IMPURITY NI AND CU ATOMS ON THE ELECTROPHYSICAL PROPERTIES OF SI

    N. A. Turgunov, E.Kh. Berkinov, R.M. Turmanova

    ArticleSilicon and Solar Cell TechnologiesAmerican Journal Of Applied Science And Technology20231 citations
    ABI

  8. Influence of Accumulation of Impurity Atoms Ni and Fe on the Electrophysical Properties of Si Single Crystals

    N. A. Turgunov, Sh. K. Akbarov, N. B. Khaytimmetov +1

    ArticleSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20240 citations
    ABI