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Works citing this work

11 works

Work: Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

  1. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    PreprintAdvancements in Semiconductor Devices and Circuit Design20216 citations
    ABI

  2. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    ArticleSemiconductor materials and devicesTechnical Physics Letters20186 citations
    ABI

  3. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1

    ArticleAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20215 citations
    ABI

  4. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

    A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

    ArticleAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20174 citations
    ABI

  5. The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

    M. M. Khalilloev, B. O. Jabbarova, Aslan Nasirov

    ArticleAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20192 citations
    ABI

  6. Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

    A. É. Atamuratov, M. M. Khalilloev, A.E. Abdikarimov +4

    ArticleAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20172 citations
    ABI

  7. Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    ArticleSemiconductor materials and devices20241 citations
    ABI

  8. A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor

    A. É. Atamuratov, D. R. Rajapov, M. M. Khalilloev +3

    ArticleAdvancements in Semiconductor Devices and Circuit DesignSilicon20251 citations
    ABI

  9. Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +2

    ArticleAdvancements in Semiconductor Devices and Circuit Designe-Journal of Surface Science and Nanotechnology20210 citations
    ABI

  10. Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +5

    ArticleAdvancements in Semiconductor Devices and Circuit DesignMicro and Nanostructures20240 citations
    ABI

  11. Impact of the gate oxide material composition on the self-heating and short channel effects in nanosheet field effect transistor

    A.E. Atamuratov, D. R. Rajapov, M. M. Khalilloev +2

    PreprintAdvancements in Semiconductor Devices and Circuit DesignResearch Square20260 citations
    ABI