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Works citing this work

7 works

Work: Short-channel effects in SOI MOSFETs

  1. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    ArticleSemiconductor materials and devicesTechnical Physics Letters20186 citations
    ABI

  2. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

    A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

    ArticleAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20174 citations
    ABI

  3. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

    A.E. Abdikarimov, Guillermo Indalecio, Enrique Comesaña +4

    ArticleAdvancements in Semiconductor Devices and Circuit Design20144 citations
    ABI

  4. Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

    A. É. Atamuratov, M. M. Khalilloev, A.E. Abdikarimov +4

    ArticleAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20172 citations
    ABI

  5. Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    ArticleSemiconductor materials and devices20241 citations
    ABI

  6. A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor

    A. É. Atamuratov, D. R. Rajapov, M. M. Khalilloev +3

    ArticleAdvancements in Semiconductor Devices and Circuit DesignSilicon20251 citations
    ABI

  7. Impact of the gate oxide material composition on the self-heating and short channel effects in nanosheet field effect transistor

    A.E. Atamuratov, D. R. Rajapov, M. M. Khalilloev +2

    PreprintAdvancements in Semiconductor Devices and Circuit DesignResearch Square20260 citations
    ABI