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6 works

Work: Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors

  1. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    ArticleSemiconductor materials and devicesTechnical Physics Letters20186 citations
    ABI

  2. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1

    ArticleAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20215 citations
    ABI

  3. The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

    M. M. Khalilloev, B. O. Jabbarova, Aslan Nasirov

    ArticleAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20192 citations
    ABI

  4. Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET

    A.E. Atamuratov, B.O. Jabbarova, M. M. Khalilloev +3

    ArticleSemiconductor materials and devicesNanosystems Physics Chemistry Mathematics20222 citations
    ABI

  5. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +3

    ArticleSemiconductor materials and devicesApplied Sciences20202 citations
    ABI

  6. The Influence of a Single Charged Interface Trap on the Subthreshold Drain Current in FinFETs with Different Fin Shapes

    A.E. Abdikarimov

    ArticleAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20201 citations
    ABI