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Works cited by this work

19 works

Work: Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

  1. Formation of nanodimensional structures on surfaces of GaAs and Si by means of ion implantation

    S. B. Donaev, Flyura Djurabekova, Д. А. Ташмухамедова +1

    ArticleIon-surface interactions and analysisPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics201420 citations
    ABI

  2. Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

    З. А. Исаханов, Z. E. Mukhtarov, Б. Е. Умирзаков +1

    ArticleIon-surface interactions and analysisTechnical Physics201119 citations
    ABI

  3. Electronic structure and optical properties of CaF2 films under low energy Ba+ ion-implantation combined with annealing

    Б. Е. Умирзаков, T.S. Pugacheva, A.T. Tashatov +1

    ArticleInorganic Fluorides and Related CompoundsNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms200016 citations
    ABI

  4. Structure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing

    Kh. Kh. Boltaev, Д. А. Ташмухамедова, Б. Е. Умирзаков

    ArticleSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201414 citations
    ABI

  5. Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

    S. B. Donaev, Б. Е. Умирзаков, Д. А. Ташмухамедова

    ArticleIon-surface interactions and analysisTechnical Physics201513 citations
    ABI

  6. Investigation of change of the composition and structure of the CaF2/Si films surface at the low-energy bombardment

    Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +2

    ArticleSilicon Nanostructures and PhotoluminescenceNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms201413 citations
    ABI

  7. Electronic and Optical Properties of GaAlAs/GaAs Thin Films

    Б. Е. Умирзаков, S. B. Donaev, N. M. Mustafaeva

    ArticlePhotocathodes and Microchannel PlatesTechnical Physics20198 citations
    ABI

  8. Superstructured ordering in Al x Ga1 − x As and Ga x In1 − x P alloys

    П. В. Середин, �. P. Domashevskaya, I. N. Arsentyev +3

    Article20136 citations
    ABI

  9. Formation of defects in GaAs and Si as a result of Pd deposition onto the surface

    И. А. Карпович, С. В. Тихов, E. L. Shobolov +1

    Article20064 citations
    ABI

  10. Effect of thermal processing on the structure and optical properties of crystalline silicon with GaSb nanocrystals formed with the aid of high-doze ion implantation

    Ф. Ф. Комаров, G. A. Ismailova, O. V. Milchanin +3

    Article20153 citations
    ABI

  11. Formation of InAs nanoclusters in silicon by high-dose ion implantation: Experimental data and simulation results

    А. Ф. Комаров, Ф. Ф. Комаров, O. V. Milchanin +5

    Article20153 citations
    ABI

  12. The structure of porous gallium phosphide

    T. N. Zavaritskaya, A. Kvit, N. N. Melnik +1

    Article19983 citations
    ABI

  13. Theory of electronic structure evolution in GaAsN and GaPN alloys

    Paul R. C. Kent, Alex Zunger

    Article20013 citations
    ABI

  14. Solar cell efficiency tables (version 49)

    Martin A. Green, Keith Emery, Yoshihiro Hishikawa +4

    Article20163 citations
    ABI

  15. A Lightweight Flexible Solar Cell Based on a Heteroepitaxial InGaP/GaAs Structure

    М. А. Putyato, N. A. Valisheva, М. О. Петрушков +8

    Article20193 citations
    ABI

  16. Trapping of charge carriers into InAs/AlAs quantum dots at liquid-helium temperature

    D. S. Abramkin, К. С. Журавлев, Т. С. Шамирзаев +2

    Article20112 citations
    ABI

  17. Optoelectronic phenomena in GaAs and GaP layers prepared by nitrogen treatment

    V. F. Agekyan, V. I. Ivanov-Omskiĭ, V. N. Knyazevskii +2

    Article19982 citations
    ABI

  18. Study of defects in heterostructures with GaPAsN and GaPN quantum wells in the GaP matrix

    Oleg I. Rumyantsev, P. N. Brunkov, E. V. Pirogov +1

    Article20102 citations
    ABI

  19. Specific features of the current–voltage characteristics of SiO2/4H-SiC MIS structures with phosphorus implanted into silicon carbide

    Aleksey Mikhaylov, Alexey V. Afanasyev, Vladimir A. Ilyin +5

    Article20162 citations
    ABI