N. N. Faleev

Работ: 3

RAS - Ioffe Physico Technical Institute

1. Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates

   W. V. Lundin, A. S. Usikov, B. V. Pushnyĭ +11

   СтатьяGaN-based semiconductor devices and materialsMaterials science forum1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000109

2. Properties of GaInAsSb solid solutions obtained from antimony fluxes by liquid-phase epitaxy in the spinodal decay region

   В. И. Васильев, A. G. Deryagin, V. I. Kuchinskiĭ +4

   СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000172

3. Electrical and Optical Properties of Highly Strained GaN Epilayers

   A. S. Usikov, W. V. Lundin, B. V. Pushnyĭ +8

   СтатьяGaN-based semiconductor devices and materialsMaterials science forum1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000191