M. P. Shcheglov

Работ: 3

Ioffe Physicotechnical Institute RAS

1. Electrical and Optical Properties of Highly Strained GaN Epilayers

   A. S. Usikov, W. V. Lundin, B. V. Pushnyĭ +8

   СтатьяGaN-based semiconductor devices and materialsMaterials science forum1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000191

2. Real structure of Cd2Nb2O7 pyrochlore single crystals

   I. L. Shul’pina, Н. Н. Колпакова, M. P. Shcheglov +1

   СтатьяFerroelectric and Piezoelectric MaterialsTechnical Physics Letters1999Цитирований: 0

   ABIABI:AkademIndex/openalex/1999.article.000164

3. Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC

   Evgenia V. Kalinina, A. S. Zubrilov, N.I. Kuznetsov +4

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2000Цитирований: 0

   ABIABI:AkademIndex/openalex/2000.article.000091