G. N. Mosina

Работ: 3

Russian Academy of Sciences

1. Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation

   N.S. Savkina, Anatoly M. Strel’chuk, L. M. Sorokin +4

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 1

   ABIABI:AkademIndex/openalex/2003.article.000136

2. Nature of Defects in MOCVD Grown GaAlAs-GaAs QW DHs

   B. Yavich, I. N. Kochnev, P. P. Buinov +4

   СтатьяSemiconductor materials and devicesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena1991Цитирований: 0

   ABIABI:AkademIndex/openalex/1991.article.000080

3. X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface

   T. S. Argunova, M. Yu. Gutkin, Jung Ho Je +5

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 0

   ABIABI:AkademIndex/openalex/2004.article.000164