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Silicon Carbide Semiconductor Technologies

Работ: 107

  1. Photoluminescence Spectra of Stacking Defects in 4H-SiC Crystals

    Б.Г. Атабаев, Kh. N. Juraev, Z. Sh. Shaymardanov +2

    СтатьяSilicon Carbide Semiconductor TechnologiesJournal of Applied Spectroscopy2025Цитирований: 0
    ABI

  2. Optimal parameters and selection criteria for neutral grounding resistors in 20 kv electrical networks

    Abdurakhim Taslimov, Feruz Raximov, Farrukh Rakhimov +1

    СтатьяMagnetic Field Sensors TechniquesAIP conference proceedings2025Цитирований: 0
    ABI

  3. Calculation of the thermal efficiency of the rankine cycle in the SMath environment

    Valery Ochkov, Nilufar Umirova, Feruza Umardjanova +1

    СтатьяSilicon Carbide Semiconductor TechnologiesAIP conference proceedings2025Цитирований: 0
    ABI

  4. Advancements in Wide Bandgap Semiconductors for High-Power and High-Frequency Applications

    Amrutha Sampath, Sudhanshu Maurya, Snehlata Wankhade +3

    СтатьяGa2O3 and related materials2025Цитирований: 0
    ABI

  5. In Situ Mapping of Space Charge Region Activation Dynamics in SiC/Si-Based Heterostructures by KPFM/STS: Role of Interface State Recharging

    M. V. Dolgopolov, N. A. Ivliev, V. V. Radenko +3

    СтатьяSilicon Carbide Semiconductor TechnologiesPhysics of Particles and Nuclei Letters2026Цитирований: 0
    ABI

  6. Low-Inductance Packaging Design for SiC Power MOSFET Modules

    Zhao Bo Zhang, Renze Yu, Saeed Jahdi +3

    СтатьяSilicon Carbide Semiconductor TechnologiesKey engineering materials2026Цитирований: 0
    ABI

  7. Hybrid IoT–ML-Assisted PCM-Based Battery Thermal Management System for Lithium-Ion Battery Modules: Experimental Investigation and Thermal Optimization

    Ghanshyam Prasad Dubey, Kasiprasad Mannepalli, H.K. Sowmya +5

    СтатьяAdvanced Battery Technologies ResearchHybrid Advances2026Цитирований: 0
    ABI