Silicon Carbide Semiconductor Technologies

Работ: 107

Investigation of 4H-SiC Layers Implanted by Al Ions
E. Kolesnikova, Evgenia V. Kalinina, A. А. Ситникова +2
СтатьяSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena2007Цитирований: 0
ABI
4H-SiC High Temperature Spectrometers
Evgenia V. Kalinina, N. B. Strokan, Alexander M. Ivanov +5
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2007Цитирований: 0
ABI
Peculiarities of Neutron-Transmutation Phosphorous Doping of SiC Enriched with 30Si Isotope: Electron Paramagnetic Resonance Study
Ivan V. Ilyin, M. V. Muzafarova, P. G. Baranov +6
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2007Цитирований: 0
ABI
Heterojunctions based on Silicon Carbide
Andrey A. Lebedev
СтатьяAdvanced ceramic materials synthesisAIP conference proceedings2007Цитирований: 0
ABI
Carrier Removal in Electron Irradiated 4H and 6H SiC
M. Mikelsen, Ulrike Großner, J. H. Bleka +6
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2008Цитирований: 0
ABI
Ultra Low Noise Epitaxial 4H-SiC X-Ray Detectors
G. Bertuccio, S. Caccia, F. Nava +7
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2009Цитирований: 0
ABI
4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C
Alexander M. Ivanov, Evgenia V. Kalinina, N. B. Strokan +1
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2009Цитирований: 0
ABI
Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions
Evgenia V. Kalinina, M. V. Zamoryanskaya, E. Kolesnikova +1
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2009Цитирований: 0
ABI
Far-Action Defects Formation and Gettering in 6H-SiC Lely Crystals Irradiated by Bi
D.B. Shustov, E. Kolesnikova, Evgenia V. Kalinina +2
СтатьяSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena2009Цитирований: 0
ABI
Diffusion Length in n-Doped 4H Silicon Carbide Crystals Detected by Alpha Particle Probe
Donatella Puglisi, Gaetano Foti, G. Bertuccio
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2009Цитирований: 0
ABI
Raman Investigation of Different Polytypes in SiC Thin Films Grown by Solid-Gas Phase Epitaxy on Si (111) and 6H-SiC Substrates
Joanna Wasyluk, T. S. Perova, С. А. Кукушкін +3
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2010Цитирований: 0
ABI
Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure
Anatoly M. Strel’chuk, Evgenia V. Kalinina, A. А. Lebedev
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2013Цитирований: 0
ABI
Photoelectrical properties of n/6H–p +/3C–SiC and n/6H–SiC–p/Cdiamond heterostructures obtained via CVD
Timur Saliev, S. L. Lutpullaev, А. Кутлимратов +1
СтатьяDiamond and Carbon-based Materials ResearchApplied Solar Energy2015Цитирований: 0
ABI
Recombination Processes in 4H-SiC pn Structures
Anatoly M. Strel’chuk, Baptiste Bérenguier, E. B. Yakimov +1
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2016Цитирований: 0
ABI
Characterization of the three-dimensional residual stress distribution in SiC bulk crystals by neutron diffraction
Xuejian Xie, Xiaobo Hu, Xiufang Chen +7
СтатьяAdvanced ceramic materials synthesisCrystEngComm2017Цитирований: 0
ABI
Computer Engineers' Challenges for the Next Decade: The Triangle of Power Density, Circuit Degradation, and Reliability
Jörg Henkel, Paolo Montuschi
СтатьяAdvancements in Semiconductor Devices and Circuit DesignComputer2017Цитирований: 0
ABI
On mechanism of radiative sensitivity of power diode direct voltage drop
A. V. Karimov, A. Z. Rakhmatov, S. P. Skorniakov +3
СтатьяSemiconductor materials and interfacesRadioelectronics and Communications Systems2017Цитирований: 0
ABI
Effect of Electron Irradiation on Electrical and Electroluminescent Properties of n+p 4H-SiC Structures
Anatoly M. Strel’chuk, A. E. Kalyadin, A. А. Lebedev +3
СтатьяSemiconductor materials and devicesMaterials science forum2018Цитирований: 0
ABI
Controlling voltage drops in silicon diodes by electron irradiation and thermal treatment
A. V. Karimov, A. Z. Rakhmatov, O. A. Abdulkhaev +3
СтатьяPulsed Power Technology ApplicationsTechnology and design in electronic equipment2018Цитирований: 0
ABI
NOISES OF ELECTRONIC DEVICES (GENERAL INFORMATION, SOURCES)
Gulkhayo Oybekovna Akbarova
СтатьяAdvancements in Semiconductor Devices and Circuit DesignEPRA International Journal of Research & Development (IJRD)2020Цитирований: 0
ABI
Application of Methane and Micro Silica for Silicon Carbide Synthesis
B. M. Abdurakhmanov, Mirtemir Kurbanov, Ulugbek Nuraliev +1
СтатьяAdvanced ceramic materials synthesisPowder Metallurgy and Metal Ceramics2022Цитирований: 0
ABI
Enhancing Energy Efficiency and Classification Modeling Through a Combined Approach of LightGBM and Stratified KFold Cross-Validation
Sushma Kakkar, A. Lakshmi, Anand Deva Durai C +6
СтатьяMachine Learning in Materials ScienceElectric Power Components and Systems2024Цитирований: 0
ABI
A Novel Four-Level T-Type Reconfigurable Fault-Tolerant Converter for Hybrid-Excitation SRM Performance Enhancement
Guoping Wang, Hao Chen, Fengyuan Yu +8
СтатьяSemiconductor materials and devicesIEEE Transactions on Transportation Electrification2024Цитирований: 0
ABI
SiC plasma characterization produced by 3 ns pulse laser at 10 10 W/cm 2 intensity
L. Torrisi, A. Torrisi, M. Cutroneo
СтатьяSilicon Carbide Semiconductor TechnologiesRadiation effects and defects in solids2024Цитирований: 0
ABI
Design of modified reference phase modulation based boost chopper fed fifteen level stepped DC link hybrid converter
R. Uthirasamy, S. Vishnu Kumar, Christo Ananth +6
СтатьяMultilevel Inverters and ConvertersScientific Reports2024Цитирований: 0
ABI

Silicon Carbide Semiconductor Technologies

Investigation of 4H-SiC Layers Implanted by Al Ions

4H-SiC High Temperature Spectrometers

Peculiarities of Neutron-Transmutation Phosphorous Doping of SiC Enriched with <sup>30</sup>Si Isotope: Electron Paramagnetic Resonance Study

Heterojunctions based on Silicon Carbide

Carrier Removal in Electron Irradiated 4H and 6H SiC

Ultra Low Noise Epitaxial 4H-SiC X-Ray Detectors

4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C

Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions

Far-Action Defects Formation and Gettering in 6H-SiC Lely Crystals Irradiated by Bi

Diffusion Length in n-Doped 4H Silicon Carbide Crystals Detected by Alpha Particle Probe

Raman Investigation of Different Polytypes in SiC Thin Films Grown by Solid-Gas Phase Epitaxy on Si (111) and 6H-SiC Substrates

Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure

Photoelectrical properties of n/6H–p +/3C–SiC and n/6H–SiC–p/Cdiamond heterostructures obtained via CVD

Recombination Processes in 4H-SiC pn Structures

Characterization of the three-dimensional residual stress distribution in SiC bulk crystals by neutron diffraction

Computer Engineers' Challenges for the Next Decade: The Triangle of Power Density, Circuit Degradation, and Reliability

On mechanism of radiative sensitivity of power diode direct voltage drop

Effect of Electron Irradiation on Electrical and Electroluminescent Properties of n<sup>+</sup>p 4H-SiC Structures

Controlling voltage drops in silicon diodes by electron irradiation and thermal treatment

NOISES OF ELECTRONIC DEVICES (GENERAL INFORMATION, SOURCES)

Application of Methane and Micro Silica for Silicon Carbide Synthesis

Enhancing Energy Efficiency and Classification Modeling Through a Combined Approach of LightGBM and Stratified KFold Cross-Validation

A Novel Four-Level T-Type Reconfigurable Fault-Tolerant Converter for Hybrid-Excitation SRM Performance Enhancement

SiC plasma characterization produced by 3 ns pulse laser at 10 <sup>10</sup> W/cm <sup>2</sup> intensity

Design of modified reference phase modulation based boost chopper fed fifteen level stepped DC link hybrid converter