Перейти к основному содержанию
AkademIndex

Продукты

Для разработчиков

AkademBaseОткрытый API экосистемы

Silicon Carbide Semiconductor Technologies

Работ: 107

  1. Advanced digital control strategies for switching buck converters: A modeling perspective

    Muhammad Adnan Samad, Yuanqing Xia, Ehab Seif Ghith +5

    СтатьяMultilevel Inverters and ConvertersMeasurement and Control2024Цитирований: 1
    ABI

  2. Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure

    Anatoly M. Strel’chuk, A. А. Lebedev, N.S. Savkina +1

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2007Цитирований: 1
    ABI

  3. Changes in the Structure and Properties of Silicon Carbide under Gamma Irradiation

    B.B. Gaibnazarov, Gunel Imanova, Ш. Т. Хожиев +5

    СтатьяAdvanced Materials and Semiconductor TechnologiesIntegrated ferroelectrics2023Цитирований: 1
    ABI

  4. Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion

    Kh. N. Zhuraev, А. Yusupov, A. G. Gulyamov +3

    СтатьяSilicon Carbide Semiconductor TechnologiesJournal of Engineering Physics and Thermophysics2020Цитирований: 1
    ABI

  5. Physical Principles of Photocurrent Generation in Multi-Barrier Punch-Through-Structures

    A. V. Karimov, D. M. Yodgorova, O. A. Abdulkhaev

    ГлаваSemiconductor materials and interfacesInTech eBooks2011Цитирований: 1
    ABI

  6. Influence of X-Ray Radiation on Some Parameters of p-n Junctions in Silicon

    O. A. Klimkova, O. R. Niyazova

    ГлаваPulsed Power Technology Applications1971Цитирований: 0
    ABI

  7. Interrelation of electrical, superconducting, and structural characteristics of low-temperature indium thin films

    Б. И. Белевцев, V. V. Pilipenko, L. A. Yatsuk

    СтатьяSurface and Thin Film PhenomenaSoviet Journal of Low Temperature Physics1981Цитирований: 0
    ABI

  8. Injection of degenerate electron-hole plasma

    Yu. A. Katulevskii

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1985Цитирований: 0
    ABI

  9. Superconducting transition temperature of cold-deposited indium films

    E. E. Semenenko, V. I. Tutov

    СтатьяInduction Heating and Inverter TechnologySoviet Journal of Low Temperature Physics1985Цитирований: 0
    ABI

  10. Investigation of crystal structure of cubic silicon carbide layers

    М. С. Саидов, Kh. A. Shamuratov, Marsel Kadyrov +1

    СтатьяSilicon Carbide Semiconductor Technologiesphysica status solidi (a)1986Цитирований: 0
    ABI

  11. Dynamic characteristics of the push‐pull dc‐dc converter

    Masahito Shoyama, Koosuke Harada

    СтатьяAdvanced DC-DC ConvertersElectronics and Communications in Japan (Part II Electronics)1986Цитирований: 0
    ABI

  12. Properties of SiC on Si Substrate Films Obtained Using the Plasma-Chemical Method

    S. I. Vlaskina, Alla Krasikova, В. Е. Родионов

    СтатьяSilicon Carbide Semiconductor Technologiesphysica status solidi (a)1991Цитирований: 0
    ABI

  13. Radiative and Radiationless Recombination Processes in 6H and 4H SiC Diodes and the Effect of Deep Centres

    M. M. Anikin, A. А. Lebedev, Anatoly M. Strel’chuk

    СтатьяSilicon Carbide Semiconductor TechnologiesDefect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum1993Цитирований: 0
    ABI

  14. High-temperature high-dose implantation of N+ and Al+ ions in 6H-SiC

    R.A. Yankov, M. Voelskow, W. Kreissig +6

    СтатьяSilicon Carbide Semiconductor TechnologiesTechnical Physics Letters1997Цитирований: 0
    ABI

  15. Theoretical description of high-temperature implantation of silicon carbide with N+ and Al+ ions

    D. V. Kulikov, Yu. V. Trushin, R.A. Yankov +2

    СтатьяSilicon Carbide Semiconductor TechnologiesTechnical Physics Letters1998Цитирований: 0
    ABI

  16. Optically Transparent 6H-Silicon Carbide

    A. Bakin, Sergey I. Dorozhkin, A. S. Zubrilov +2

    СтатьяThin-Film Transistor TechnologiesMaterials science forum1998Цитирований: 0
    ABI

  17. Structural and Morphological Characterization of Al/Ti-Based Ohmic Contacts on p-Type 4H-SiC Annealed Under Various Conditions

    Konstantin Vassilevski, Konstantinos Zekentes, George Konstantinidis +3

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2000Цитирований: 0
    ABI

  18. Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC

    Evgenia V. Kalinina, A. S. Zubrilov, N.I. Kuznetsov +4

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2000Цитирований: 0
    ABI

  19. Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation

    A. А. Lebedev, D. V. Davydov, Anatoly M. Strel’chuk +4

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2000Цитирований: 0
    ABI

  20. Growth of SiC and GaN on Porous Buffer Layers

    M. G. Mynbaeva, N.S. Savkina, A. S. Tregubova +12

    СтатьяGaN-based semiconductor devices and materialsMaterials science forum2000Цитирований: 0
    ABI

  21. 4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density

    Evgenia V. Kalinina, A. S. Zubrilov, В. А. Соловьев +6

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2000Цитирований: 0
    ABI

  22. Electric Characteristics of 6H-SiC/GaN Isotype n-n Heterojunctions

    N.I. Kuznetsov, A. E. Nikolaev, Yu. Melnik +1

    СтатьяGaN-based semiconductor devices and materialsMaterials science forum2000Цитирований: 0
    ABI

  23. Excess tunneling currents in p-Si-n-3C-SiC heterostructures

    Smagul Karazhanov, I. G. Atabaev, Timur Saliev +2

    СтатьяSilicon Carbide Semiconductor TechnologiesSemiconductors2001Цитирований: 0
    ABI

  24. Reliable Ohmic Contacts to LPE p-Type 4H-SiC for High-Power p-n Diode

    Roumen Kakanakov, Liliana Kassamakova, N. Hristeva +3

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2002Цитирований: 0
    ABI

  25. p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization

    A. А. Lebedev, Anatoly M. Strel’chuk, D. V. Davydov +5

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2002Цитирований: 0
    ABI